Philips 2sc2925 DATASHEETS

Transistors

2SC2925

Silicon NPN epitaxial planar type

For low-frequency output amplification

5.0

±0.2

Unit: mm

4.0

±0.2

■ Features

2.5

+0.6
–0.2

±0.2

0.7

±0.2

2.3

±0.2

5.1

±0.5

12.9

+0.15

0.45

–0.1

1: Emitter
2: Collector
3: Base

EIAJ: SC-43A

TO-92-B1 Package

• High forward current transfer ratio h

• Low collector-emitter saturation voltage V

FE

CE(sat)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

60 V

50 V

15 V

0.7 A

1.5 A

750 mW

150 °C

0.45

0.7

2.5

+0.15
–0.1

±0.1

+0.6
–0.2

123

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

h

FE

CE(sat)IC

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R S T

h

FE

400 to 800 600 to 1 200 1 000 to 2 000

= 10 µA, IE = 060V

= 1 mA, IB = 050V

= 10 µA, IC = 015V

VCB = 20 V, IE = 01µA

VCE = 20 V, IB = 010µA

VCE = 10 V, IC = 150 mA 400 1 000 2 000 

= 500 mA, IB = 50 mA 0.15 0.40 V

VCB = 10 V, IE = 0, f = 1 MHz 11 15 pF

ob

Publication date: March 2003 SJC00124BED

1

2SC2925

PC  T

1.0

)
W

(

0.8

C

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080

a

Ambient temperature Ta (°C

V

 I

)
V

(

BE(sat)

100

BE(sat)

10

25°C

1

−25°C

0.1

C

IC / IB = 10

Ta = 75°C

Base-emitter saturation voltage V

0.01

0.01 0.1 1 10

Collector current IC (A

IC  V

hFE  I

CE

C

IB = 100 µA

90 µA

80 µA

70 µA

60 µA

50 µA

40 µA

30 µA

20 µA

10 µA

VCE = 10 V

)

100

)
V

(

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

0.01 0.1 1 10

)

400

)

300

MHz
(

T

200

100

Transition frequency f

0

− 0.001

120

Ta = 25°C

100

)

mA
(

80

C

60

40

Collector current I

20

0

012108264

)

)

Collector-emitter voltage VCE (V

2 400

2 000

FE

1 600

Ta = 75°C

1 200

800

Forward current transfer ratio h

400

0

0.01 0.1 1 10

25°C

−25°C

Collector current IC (A

V

 I

CE(sat)

Ta = 75°C

25°C

C

IC / IB = 10

−25°C

Collector current IC (A

fT  I

E

VCB = 10 V

= 25°C

T

a

− 0.01 − 0.1 −1

Emitter current IE (A

)

)

Cob  V

40

(pF)

ob

C

30

20

10

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

Collector-base voltage VCB (V

2

f = 1 MHz

= 25°C

T

a

)

SJC00124BED