Transistors
2SC2925
Silicon NPN epitaxial planar type
For low-frequency output amplification
5.0
±0.2
Unit: mm
4.0
±0.2
■ Features
2.5
+0.6
–0.2
±0.2
0.7
±0.2
2.3
±0.2
5.1
±0.5
12.9
+0.15
0.45
–0.1
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
FE
CE(sat)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
60 V
50 V
15 V
0.7 A
1.5 A
750 mW
150 °C
0.45
0.7
2.5
+0.15
–0.1
±0.1
+0.6
–0.2
123
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage V
CBOIC
CEOIC
EBOIE
I
CBO
I
CEO
h
FE
CE(sat)IC
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank R S T
h
FE
400 to 800 600 to 1 200 1 000 to 2 000
= 10 µA, IE = 060V
= 1 mA, IB = 050V
= 10 µA, IC = 015V
VCB = 20 V, IE = 01µA
VCE = 20 V, IB = 010µA
VCE = 10 V, IC = 150 mA 400 1 000 2 000
= 500 mA, IB = 50 mA 0.15 0.40 V
VCB = 10 V, IE = 0, f = 1 MHz 11 15 pF
ob
Publication date: March 2003 SJC00124BED
1
2SC2925
PC T
1.0
)
W
(
0.8
C
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080
a
Ambient temperature Ta (°C
V
I
)
V
(
BE(sat)
100
BE(sat)
10
25°C
1
−25°C
0.1
C
IC / IB = 10
Ta = 75°C
Base-emitter saturation voltage V
0.01
0.01 0.1 1 10
Collector current IC (A
IC V
hFE I
CE
C
IB = 100 µA
90 µA
80 µA
70 µA
60 µA
50 µA
40 µA
30 µA
20 µA
10 µA
VCE = 10 V
)
100
)
V
(
CE(sat)
10
1
0.1
Collector-emitter saturation voltage V
0.01
0.01 0.1 1 10
)
400
)
300
MHz
(
T
200
100
Transition frequency f
0
− 0.001
120
Ta = 25°C
100
)
mA
(
80
C
60
40
Collector current I
20
0
012108264
)
)
Collector-emitter voltage VCE (V
2 400
2 000
FE
1 600
Ta = 75°C
1 200
800
Forward current transfer ratio h
400
0
0.01 0.1 1 10
25°C
−25°C
Collector current IC (A
V
I
CE(sat)
Ta = 75°C
25°C
C
IC / IB = 10
−25°C
Collector current IC (A
fT I
E
VCB = 10 V
= 25°C
T
a
− 0.01 − 0.1 −1
Emitter current IE (A
)
)
Cob V
40
(pF)
ob
C
30
20
10
Collector output capacitance
(Common base, input open circuited)
0
1 10 100
CB
Collector-base voltage VCB (V
2
f = 1 MHz
= 25°C
T
a
)
SJC00124BED