Philips 2sc2922 DATASHEETS

61

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216)

Application : Audio and General Purpose

Symbol V

CBO

VCEO VEBO IC IB PC Tj T

stg

2SC2922

180 180

5

17

5

200(Tc=25°C)

150

–55 to +150

Unit

V V V A A

W °C °C

■

Absolute maximum ratings

■

Electrical Characteristics

■Typical Switching Characteristics (Common Emitter)

Symbol

I

CBO

IEBO V(BR)CEO hFE VCE(sat) fT COB

2SC2922

100

max

100max 180min

30min∗

2.0

max

50typ

250typ

Unit

µ

A

µ

A

V

MHz

pF

Conditions

V

CB=180V

V

EB=5V

I

C=25mA

V

CE=4V, IC=8V

I

C=8A, IB=0.8A

V

CE=12V, IE=–2A

V

CB=10V, f=1MHz

VCC

(V) 40

R

L

(Ω)

4

I

C

(A)

10

V

B2

(V)

–5

IB2

(A)

–1

ton

(µs)

0.2typ

t

stg

(µs)

1.3typ

t

f

(µs)

0.45typ

IB1 (A)

1

LAPT 2SC2922

(Ta=25°C) (Ta=25°C)

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

hFE–IC

Temperature Characteristics (Typical)

θj-a

–

t Characteristics

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

Safe Operating Area (Single Pulse)

fT–IE Characteristics

(Typical)

0

3

2

1

0 0.2 0.4 0.6 1.00.8

Base Current I

B(A)

Collector-Emitter Saturation Voltage VCE(sat)(V)

IC =10A

5A

0

17

15

10

5

0 2 2.41

Base-Emittor Voltage V

BE(V)

Collector Current IC(A)

(VCE=4V)

125˚C (Case Temp)

25˚C

–30˚C (Case Temp)

200

160

120

80

40

5 0

0 25 50 75 100 125 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

2 10 100 300

0.2

1

0.5

10

50

5

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

Without Heatsink

Natural Cooling

DC

10ms

0.02 0.1 1 1050.5 17

10

50

100

200

Collector Current IC(A)

DC Current Gain hFE

(VCE=4V)

Typ

0

5

17

15

10

2134

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

600mA

700mA

1A

500mA

400mA

300mA

200mA

100mA

50mA

I

B

=20mA

1.5A

(VCE=4V)

0.02 0.5 1 5 100.1 17 Collector Current I

C(A)

DC Current Gain hFE

125˚C

25˚C

–30˚C

10

50

100

200

–0.02 –0.1 –1 –5 –10

0

40

60

20

80

Cut-off Frequency fT(MHZ)

(VCE=12V)

Emitter Current IE(A)

Typ

1 10 100 1000 2000

Time t(ms)

0.1

1

2

0.5

Transient Thermal Resistance θj-a(˚C/W)

External Dimensions MT-200

Weight : Approx 18.4g a. Type No. b. Lot No.

∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)