Philips 2sc2878 DATASHEETS
TOSHIBA Transistor Silicon NPN Epitaxial Type
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2SC2878
2SC2878
For Muting and Switching Applications
· High emitter-base voltage: V
· High reverse h
: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)
FE
· Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC 300 mA
Base current IB 60 mA
Collector power dissipation PC 400 mW
Junction temperature T
Storage temperature range T
(Ta ==== 25°C)
Electrical Characteristics
= 25 V (min)
EBO
(Ta ==== 25°C)
50 V
CBO
20 V
CEO
25 V
EBO
125 °C
-55~125 °C
stg
j
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
DC current gain
Collector-emitter saturation voltage V
Base-emitter voltage VBE VCE = 2 V, IC = 4 mA ¾ 0.61 ¾ V
Transition frequency fT VCE = 6 V, IC = 4 mA ¾ 30 ¾ MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 4.8 7 pF
Turn-on time ton ¾ 160 ¾
Switching time
Storage time t
Fall time t
VCB = 50 V, IE = 0 ¾ ¾ 0.1 mA
CBO
VEB = 25 V, IC = 0 ¾ ¾ 0.1 mA
EBO
h
FE
CE (sat)
stg
f
V
= 2 V, IC = 4 mA 200 ¾ 1200
(Note)
¾ 500 ¾
CE
IC = 30 mA, IB = 3 mA ¾ 0.042 0.1 V
Duty cycle
2%
¾ 130 ¾
Note: hFE classification A: 200~700, B: 350~1200
ns
1
2003-03-25
2SC2878
2
2003-03-25
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