Philips 2sc2344, 2sa1011 DATASHEETS

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

PNP/NPN Epitaxial Planar Silicon Transistors

High-Voltage Switching, AF Power Amp,

100W Output Predriver Applications

Ordering number:ENN544G

2SA1011/2SC2344

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Package Dimensions

unit:mm

2010C

[2SA1011/2SC2344]

10.2

3.6

18.0

( ) : 2SA1011

Specifications

5.6

2.55

5.1

2.7

1.2

0.8

123

2.7

2.55

Absolute Maximum Ratings at Ta = 25˚C

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egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

PC

Tc=25˚C

C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCDh

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

egatloVrettimE-ot-esaBV

* : The 2SA1011/2SC2344 are classified by 300mA hFE as follows : Continued on next page.

knaRDE

h

EF

021ot06002ot001

V

OBC
OBE

EF

T

bo
EB

BC

V

BE

V

EC

V

EC

V

BC

V

EC

I,V021)–(=

0=01)–(Aµ

E

I,V4)–(=

0=01)–(Aµ

C

I,V5)–(=

C

I,V01)–(=

C

I,V5)–(=

C

Am003)–(=*06*002
Am05)–(=001zHM

zHM1=f,V01)–(=

Am01)–(=5.1)–(V

4.5

6.3

15.1

14.0

0.4

1 : Base
2 : Collector
3 : Emitter
SANYO : TO220AB

nimpytxam

1.3

sgnitaR

)03(Fp

32Fp

081)–(V

061)–(V

6)–(V

5.1)–(A

3)–(A
52W

˚C
˚C

tinU

70502TN (KT)/71598HA (KT)/30196TS APS 8-3288/D251MH/3207AT/2265MY, TS No.544-1/4

2SA1011/2SC2344

Continued from preceding page.

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egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

emiTNO-nruTt

emiTllaFt

emiTegarotSt

Switching Time Test Circuit

I

)tas(EC

C

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

no

f

gts

I,Am005)–(=

B

I,Am1)–(=

E

R,Am1)–(=

EB

I,Am01)–(=

C

Am05)–(=

0=081)–(V

=∞ 061)–(V
0=6)–(V

tiucriCtseTdeificepseeS

tiucriCtseTdeificepseeS

tiucriCtseTdeificepseeS

sgnitaR

nimpytxam

)5.0–(V

3.0V

)92.0(

51.0
)91.0(

84.0
)84.0(

18.0

tinU

sµ

sµ

sµ

--1.0

--0.8

–A

C

--0.6

--0.4

Collector Current, I

--0.2

--2.4

--2.0

I

B1

INPUT

PW=20µs

1Ω

I

B2

V

R

200Ω

51

1µF

Ω

--2V

10IB1=--10IB2=IC=0.5A
(For PNP, the polarity is reversed.)

IC -- V

--8mA

--7mA

--6mA

--5mA

0

0

--10 --20 --30 --40 --50

Collector-to-Emitter Voltage, VCE–V

IC -- V

CE

--4mA

--3mA

BE

1µF

--2mA

--1

IB=0

OUTPUT

mA

40Ω

20V

2SA1011

2SA1011
VCE=--5V

ITR02941

1.0

IC -- V

CE

2SC2344

0.8

–A

C

0.6

8mA

7mA

6mA

5mA

4mA

0.4

3mA

2mA

Collector Current, I

0.2

0

01020304050

Collector-to-Emitter Voltage, VCE–V

2.4

IC -- V

BE

1

IB=0

mA

ITR02942

2SC2344
VCE=5V

2.0

–A

--1.6

C

--1.2

°C

125

75

C

°

C

°

C

°

25

Ta=--25

--0.8

Collector Current, I

--0.4

0

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4

Base-to-Emitter Voltage, VBE–V

ITR02943

–A

1.6

C

1.2

0.8

Collector Current, I

0.4

0

0 1.0 1.2 1.40.6 0.80.40.2

°C

75

C

°

125

C

°

C

°

25

Ta=--25

Base-to-Emitter Voltage, VBE–V

ITR02944

No.544-2/4