Philips 2sc2344, 2sa1011 DATASHEETS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching, AF Power Amp,
100W Output Predriver Applications
Ordering number:ENN544G
2SA1011/2SC2344
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Package Dimensions
unit:mm
2010C
[2SA1011/2SC2344]
10.2
3.6
18.0
( ) : 2SA1011
Specifications
5.6
2.55
5.1
2.7
1.2
0.8
123
2.7
2.55
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
Tc=25˚C
C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVrettimE-ot-esaBV
* : The 2SA1011/2SC2344 are classified by 300mA hFE as follows : Continued on next page.
knaRDE
h
EF
021ot06002ot001
V
OBC
OBE
EF
T
bo
EB
BC
V
BE
V
EC
V
EC
V
BC
V
EC
I,V021)–(=
0=01)–(Aµ
E
I,V4)–(=
0=01)–(Aµ
C
I,V5)–(=
C
I,V01)–(=
C
I,V5)–(=
C
Am003)–(=*06*002
Am05)–(=001zHM
zHM1=f,V01)–(=
Am01)–(=5.1)–(V
4.5
6.3
15.1
14.0
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO220AB
nimpytxam
1.3
sgnitaR
)03(Fp
32Fp
081)–(V
061)–(V
6)–(V
5.1)–(A
3)–(A
52W
˚C
˚C
tinU
70502TN (KT)/71598HA (KT)/30196TS APS 8-3288/D251MH/3207AT/2265MY, TS No.544-1/4
2SA1011/2SC2344
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTllaFt
emiTegarotSt
Switching Time Test Circuit
I
)tas(EC
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
f
gts
I,Am005)–(=
B
I,Am1)–(=
E
R,Am1)–(=
EB
I,Am01)–(=
C
Am05)–(=
0=081)–(V
=∞ 061)–(V
0=6)–(V
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)5.0–(V
3.0V
)92.0(
51.0
)91.0(
84.0
)84.0(
18.0
tinU
sµ
sµ
sµ
--1.0
--0.8
–A
C
--0.6
--0.4
Collector Current, I
--0.2
--2.4
--2.0
I
B1
INPUT
PW=20µs
1Ω
I
B2
V
R
200Ω
51
1µF
Ω
--2V
10IB1=--10IB2=IC=0.5A
(For PNP, the polarity is reversed.)
IC -- V
--8mA
--7mA
--6mA
--5mA
0
0
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE–V
IC -- V
CE
--4mA
--3mA
BE
1µF
--2mA
--1
IB=0
OUTPUT
mA
40Ω
20V
2SA1011
2SA1011
VCE=--5V
ITR02941
1.0
IC -- V
CE
2SC2344
0.8
–A
C
0.6
8mA
7mA
6mA
5mA
4mA
0.4
3mA
2mA
Collector Current, I
0.2
0
01020304050
Collector-to-Emitter Voltage, VCE–V
2.4
IC -- V
BE
1
IB=0
mA
ITR02942
2SC2344
VCE=5V
2.0
–A
--1.6
C
--1.2
°C
125
75
C
°
C
°
C
°
25
Ta=--25
--0.8
Collector Current, I
--0.4
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE–V
ITR02943
–A
1.6
C
1.2
0.8
Collector Current, I
0.4
0
0 1.0 1.2 1.40.6 0.80.40.2
°C
75
C
°
125
C
°
C
°
25
Ta=--25
Base-to-Emitter Voltage, VBE–V
ITR02944
No.544-2/4
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