Philips 2sc2240 DATASHEETS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2240
2SC2240
Low Noise Audio Amplifier Applications
The 2SC2240 is a transistor for low frequency and low noise
applications. This device is designed to lower noise figure in the region of
low signal source impedance, and to lower the pulse noise. This is
recommended for the first stages of Equalizer amplifiers.
· Low noise : NF = 4dB (typ.) R
f = 1 kHz
: NF = 0.5dB (typ.) R
f = 1 kHz
· Low pulse noise: Low 1/f noise
· High DC current gain: h
· High breakdown voltage: V
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC 100 mA
Base current IB 20 mA
Collector power dissipation PC 300 mW
Junction temperature T
Storage temperature range T
(Ta ==== 25°C)
= 100 Ω, VCE = 6 V, IC = 100 µA,
G
= 1 kΩ, VCE = 6 V, IC = 100 µA,
G
= 200~700
FE
= 120 V
CEO
120 V
CBO
120 V
CEO
5 V
EBO
j
stg
-55~125 °C
125 °C
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
1
2003-03-25
2SC2240
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter breakdown voltage V
DC current gain
Collector-emitter saturation voltage V
Base-emitter voltage VBE VCE = 6 V, IC = 2 mA ¾ 0.65 ¾ V
Transition frequency fT VCE = 6 V, IC = 1 mA ¾ 100 ¾ MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 3.0 ¾ pF
Noise figure NF
(Ta ==== 25°C)
(BR) CEOIC
CE (sat)
VCB = 120 V, IE = 0 ¾ ¾ 0.1 mA
CBO
VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA
EBO
= 1 mA, IB = 0 120 ¾ ¾ V
h
FE
V
= 6 V, IC = 2 mA 200 ¾ 700
(Note)
CE
IC = 10 mA, IB = 1 mA ¾ ¾ 0.3 V
VCE = 6 V, IC = 0.1 mA, f = 10 Hz,
R
= 10 kW
G
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
R
= 10 kW
G
V
= 6 V, IC = 0.1 mA, f = 1 kHz,
CE
R
= 100 W
G
¾ ¾ 6
¾ ¾ 2
¾ 4 ¾
Note: hFE classification GR: 200~400, BL: 350~700
dB
2
2003-03-25
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