Philips 2sc1815 DATASHEETS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
· High voltage and high current: V
I
· Excellent hFE linearity : h
FE (2)
at VCE = 6 V, IC = 150 mA
: h
(IC = 0.1 mA)/hFE (IC = 2 mA)
FE
= 0.95 (typ.)
· Low noise: NF = 1dB (typ.) at f = 1 kHz
· Complementary to 2SA1015 (O, Y, GR class)
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC 150 mA
Base current IB 50 mA
Collector power dissipation PC 400 mW
Junction temperature T
Storage temperature range T
(Ta ==== 25°C)
Electrical Characteristics
= 50 V (min),
CEO
= 150 mA (max)
C
= 100 (typ.)
60 V
CBO
50 V
CEO
5 V
EBO
j
stg
(Ta ==== 25°C)
125 °C
-55~125 °C
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
DC current gain
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency fT VCE = 10 V, IC = 1 mA 80 ¾ ¾ MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 2.0 3.5 pF
Base intrinsic resistance r
Noise figure NF
VCB = 60 V, IE = 0 ¾ ¾ 0.1 mA
CBO
VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA
EBO
h
FE (1)
(Note)
h
VCE = 6 V, IC = 150 mA 25 100 ¾
FE (2)
IC = 100 mA, IB = 10 mA ¾ 0.1 0.25 V
CE (sat)
IC = 100 mA, IB = 10 mA ¾ ¾ 1.0 V
BE (sat)
bb’
= 6 V, IC = 2 mA 70 ¾ 700
V
CE
V
= 10 V, IE = -1 mA
CE
f = 30 MHz
V
= 6 V, IC = 0.1 mA
CE
f = 1 kHz, R
G
= 10 kW
¾ 50 ¾ W
¾ 1.0 10 dB
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
1
2003-03-27
2SC1815
2
2003-03-27
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