Philips 2sb817, 2sd1047 DATASHEETS
Ordering number:680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features
· Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).
· Wide ASO because of on-chip ballast resistance.
· Good depenedence of fT on current and excellent
high frequency responce.
The descriptions in parentheses are for the 2SB817 only :
other descriptions than those in parentheses are common
to the 2SB817 and 2SD1047.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot04–
OBC
OEC
OBE
C
PC
Tc=25˚C
C
Package Dimensions
unit:mm
2022A
[2SB817/2SD1047]
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
061)–(V
041)–(V
6)–(V
21)–(A
51)–(A
001W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SB817/2SD1047 are classified by 1A hFE as follows :
hEF2VECI,V5)–(=
021D06002E001
OBC
OBE
1VECI,V5)–(=
EF
T
bo
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
V
BC
V
BE
V
EC
V
BC
I,V08)–(=
0=1.0)–(Am
E
I,V4)–(=
0=1.0)–(Am
C
A1)–(=
C
A6)–(=
C
I,V5)–(=
A1)–(=51zHM
C
zHM1=f,V01)–(=
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/4
sgnitaR
*06*002
02
)003(Fp
012Fp
tinU
2SB817/2SD1047
retemaraPlobmySsnoitidnoC
egatloVrettimE-ot-esaBV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTllaFt
emiTegarotSt
V
EB
I
)tas(EC
C
I
OBC)RB(
C
I
OEC)RB(
C
I
C
I
OBE)RB(
E
no
f
gts
I,V5)–(=
EC
I,A5)–(=
A1)–(=5.1V
C
A5.0)–(=
B
I,Am5)–(=
0=061)–(V
E
R,Am5)–(=
=∞ 041)–(V
EB
R,Am05)–(=
=∞ 041)–(V
EB
I,Am5)–(=
0=6)–(V
C
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
Switching Time T est Circuit
sgnitaR
nimpytxam
6.05.2V
)1.1(V
)52.0(sµ
62.0sµ
)35.0(sµ
86.0sµ
)16.1(sµ
88.6sµ
tinU
No.680–2/4
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