Philips 2sb816 DATASHEETS
Ordering number:677D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output
Large Power Switching Applications
Features
· Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).
· Wide ASO because of built-in ballast resistance.
· Goode dependence of fT on current and good HF
characteristic.
( ) : 2SB816
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot04–
OBC
OEC
OBE
C
PC
C
Tc=25˚C
Package Dimensions
unit:mm
2022A
[2SB816/2SD1046]
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
051)–(V
021)–(V
6)–(V
8)–(A
21)–(A
08W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SB816/2SD1046 are classified by 1A hFE as follows :
021D06002E001
OBC
OBE
1VECI,V5)–(=
EF
hEF2VECI,V5)–(=
T
bo
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
V
BC
V
BE
V
EC
V
BC
I,V08)–(=
0=1.0)–(Am
E
I,V4)–(=
0=1.0)–(Am
C
A1)–(=
C
A5)–(=
C
I,V5)–(=
A1)–(=51zHM
C
zHM1=f,V01)–(=
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/4017KI/6284KI, MT No.677–1/4
sgnitaR
*06*002
02
)022(Fp
061Fp
tinU
2SB816/2SD1046
retemaraPlobmySsnoitidnoC
egatloVrettimE-ot-esaBV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTllaFt
emiTegarotSt
V
EB
I
)tas(EC
C
I
OBC)RB(
C
I
OEC)RB(
C
I
C
I
OBE)RB(
E
no
f
gts
I,V5)–(=
EC
I,A5)–(=
A1)–(=5.1V
C
A5.0)–(=0.10.2V
B
I,Am5)–(=
0=051)–(V
E
R,Am5)–(=
=∞ 021)–(V
EB
R,Am05)–(=
=∞ 021)–(V
EB
I,Am5)–(=
0=6)–(V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Swicthing Time Test Circuit
sgnitaR
nimpytxam
)22.0(sµ
22.0sµ
)73.0(sµ
20.1sµ
)39.0(sµ
66.6sµ
tinU
No.677–2/4
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