Philips 2sa970 DATASHEETS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA970
2SA970
Low Noise Audio Amplifier Applications
· Low noise : NF = 3dB (typ.) R
f = 1 kHz
: NF = 0.5dB (typ.) R
f = 1 kHz
· High DC current gain: h
· High breakdown voltage: V
· Low pulse noise. Low 1/f noise
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC -100 mA
Base current IB -20 mA
Collector power dissipation PC 300 mW
Junction temperature T
Storage temperature range T
(Ta ==== 25°C)
Electrical Characteristics
= 100 Ω, VCE = −6 V, IC = −100 µA,
G
= 1 kΩ, VCE = −6 V, IC = −100 µA,
G
= 200~700
FE
= −120 V
CEO
-120 V
CBO
-120 V
CEO
-5 V
EBO
j
stg
(Ta ==== 25°C)
125 °C
-55~125 °C
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter breakdown voltage V
DC current gain
Collector-emitter saturation voltage V
Base-emitter voltage VBE VCE = -6 V, IC = -2 mA ¾ 0.65 ¾ V
Transition frequency fT VCE = -6 V, IC = -1 mA ¾ 100 ¾ MHz
Collector output capacitance Cob VCB = -10 V, IE = 0, f = 1 MHz ¾ 4.0 ¾ pF
Noise figure NF
VCB = -120 V, IE = 0 ¾ ¾ -0.1 mA
CBO
VEB = -5 V, IC = 0 ¾ ¾ -0.1 mA
EBO
(BR) CEOIC
h
FE
(Note)
CE (sat)
= -1 mA, IB = 0 -120 ¾ ¾ V
= -6 V, IC = -2 mA 200 ¾ 700
V
CE
IC = -10 mA, IB = -1 mA ¾ ¾ -0.3 V
VCE = -6 V, IC = -0.1 mA, f = 10 Hz,
R
= 10 kW
G
VCE = -6 V, IC = -0.1 mA, f = 1 kHz,
R
= 10 kW
G
V
= -6 V, IC = -0.1 mA, f = 1 kHz,
CE
R
= 100 W
G
¾ ¾ 6
¾ ¾ 2
¾ 3 ¾
Note: hFE classification GR: 200~400, BL: 350~700
dB
1
2003-03-24
2SA970
2
2003-03-24
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