Philips 2sa1494 DATASHEETS

∗hFE Rank Y(50to100), P(70to140), G(90to180)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858)

Application : Audio and General Purpose

Symbol V

CBO

VCEO VEBO IC IB PC Tj T

stg

2SA1494

–200 –200

–6

–17

–5

200(Tc=25°C)

150

–55

to

+150

Unit

V V V A A

W °C °C

■

Absolute maximum ratings

■

Electrical Characteristics

■Typical Switching Characteristics (Common Emitter)

Symbol

I

CBO

IEBO V(BR)CEO hFE VCE(sat) fT COB

2SA1494 –100

max

–100max –200min

50min∗

–2.5max

20typ

500typ

Unit

µ

A

µ

A

V

V

MHz

pF

Conditions

V

CB=–200V

V

EB=–6V

I

C=–50mA

V

CE=–4V, IC=–8A

I

C=–10A, IB=–1A

V

CE=–12V, IE=1A

V

CB=–10V, f=1MHz

VCC

(V)

–40

R

L

(Ω)

4

IC

(A)

–10

V

BB2

(V)

5

I

B2

(A)

1

t

on

(µs)

0.6typ

t

stg

(µs)

0.9typ

t

f

(µs)

0.2typ

I

B1

(A) –1

2SA1494

(Ta=25°C) (Ta=25°C)

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

Safe Operating Area (Single Pulse)

hFE–IC

Temperature Characteristics (Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

0

0

–5

–10

–15

–17

–1 –2 –3 –4

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

–1.5A

–50mA

–100mA

–1A

–600mA

–400mA

–200mA

I

B

=–20mA

0

–3

–2

–1

0–1–2–3

Base Current I

B(A)

Collector-Emitter Saturation Voltage VCE(sat)(V)

IC =–15A

–10A

–5A

–0.02 –0.1 –1 –17–10–5–0.5

50

10

100

300

Collector Current IC(A)

DC Current Gain hFE

(VCE=–4V)

Typ

Collector-Emitter Voltage VCE(V)

Collector Current IC(A)

–2 –10 –100 –300

–0.1

–1

–0.5

–10

–50

–5

3ms

Without Heatsink

Natural Cooling

DC

100ms

20ms

10ms

0.02 0.1 1 10

0

30

10

20

Cut-off Frequency fT(MHZ)

(VCE=–12V)

Emitter Current IE(A)

Typ

fT–IE Characteristics

(Typical)

200

160

120

80

40

5 0

0 25 50 75 100 125 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

(V

CE=–4V)

–0.02 –0.1 –0.5 –1 –5 –10 –17

20

50

100

200

Collector Current I

C(A)

DC Current Gain hFE

125˚C

25˚C

–30˚C

IC–VBE Temperature Characteristics

(Typical)

0

–17

–15

–10

–5

0–2–1

Base-Emittor Voltage V

BE(V)

Collector Current IC(A)

(VCE=–4V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

θj-a

–

t Characteristics

1 10 100 1000 2000

Time t(ms)

0.1

1

2

0.5

Transient Thermal Resistance θj-a(˚C/W)

VBB1

(V)

–10

External Dimensions MT-200

2

3

1.05

+0.2

-0.1

BE

5.45

±0.1

5.45

±0.1

2-ø3.2

±0.1

36.4

±0.3

9

24.4

±0.2

7

21.4

±0.3

20.0min

4.0max

0.65

+0.2

-0.1

3.0

+0.3

-0.1

6.0

±0.2

2.1

a b

C

22

Weight : Approx 18.4g a. Type No. b. Lot No.

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