Philips 2sa1380 DATASHEETS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Ultrahigh-Definition CRT Display,
Video Output Applications
Ordering number:ENN1425C
2SA1380/2SC3502
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
8.0
4.0
7.0
11.0
1.5
15.5
3.0
1.6
0.8
0.8
0.6
0.5
2.7
4.8
2.4
1.2
123
3.0
Features
· High breakdown voltage : V
· Small reverse transfer capacitance and excellent
high-frequnecy characteristics
: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.
· Adoption of FBET process
( ) : 2SA1380
CEO
≥200V.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2009B
[2SA1380/2SC3502]
Tc=25˚C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
002)–(V
002)–(V
5)–(V
001)–(Am
002)–(Am
2.1W
5W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
* : The 2SA1380/2SC3502 are classified by 10mA hFE as follows : Continued on next page.
knaRCDEF
h
EF
08ot04021ot06002ot001023ot061
92502AS (KT)/71598HA (KT)/10996TS (KOTO) X-6422/3237KI/D134MW, TS No.1425-1/5
V
OBC
OBE
EF
T
BC
V
=BE
V
EC
V
EC
I,V051)–(=
0=1.0)–(Aµ
E
I,V4)–(
0=1.0)–(Aµ
C
I,V01)–(=
C
I,V03)–(=
C
Am01)–(=*04*023
Am01)–(=051zHM
sgnitaR
nimpytxam
tinU
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
2SA1380/2SC3502
V
bo
er
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
BC
V
BC
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
zHM1=f,V03)–(=
zHM1=f,V03)–(=
I,Am02)–(=
Am2)–(=6.0)–(V
B
I,Am02)–(=
Am2)–(=0.1)–(V
B
I,Aµ01)–(=
0=002)–(V
E
R,Am1)–(=
=∞ 002)–(V
EB
I,Aµ01)–(=
0=5)–(V
C
sgnitaR
nimpytxam
7.1Fp
)6.2(Fp
2.1Fp
)7.1(Fp
tinU
IC -- V
–mA
C
--
8
--
7
--
6
--
5
--
4
--
3
Collector Current, I
--
2
--
1
0--1--2--3--4--5--6--7--8--9--10
--50
--40
--30
--20µA
--10
=0
I
B
CE
2SA1380
µA
µA
µA
µA
Collector-to-Emitter Voltage, VCE–V
--
10
--
8
IC -- V
--50
CE
2SA1380
µA
–mA
C
--
6
--40µA
--30µA
--
4
µA
--20
Collector Current, I
--
120
2
0
0
--
20
Collector-to-Emitter Voltage, VCE–V
--10µA
I
B
--
40
IC -- V
=0
--
BE
60
--
80
2SA1380
VCE=10V
100
ITR03324
ITR03326
IC -- V
–mA
C
Collector Current, I
20
18
16
14
12
10
8
6
4
2
0
2SC3502
Collector-to-Emitter Voltage, VCE–V
10
2SC3502
9
8
7
–mA
C
6
5
4
3
Collector Current, I
2
1
--
100
0
Collector-to-Emitter Voltage, VCE–V
120
IC -- V
IC -- V
160µA
140µA
120µA
100µA
80µA
60µA
40µA
20µA
=0
I
B
µA
80
µA
70
60µA
50µA
40µA
30µA
20µA
10µA
=0
I
B
CE
1067 89123450
ITR03325
CE
60 70 80 1009040 5020 30100
ITR03327
BE
2SC3502
VCE=10V
100
–mA
80
C
60
40
Collector Current, I
20
0
0 0.2 0.4 0.6 0.8 1.0
°C
Ta=75
°C
25
--25
Base-to-Emitter Voltage, VBE–V
°C
ITR03328
–mA
80
C
60
40
Collector Current, I
20
0
0 0.2 0.4 0.6 0.8 1.0
°C
Ta=75
°C
°C
25
--25
Base-to-Emitter Voltage, VBE–V
ITR03329
No.1425-2/5
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