Philips 2sa1360 DATASHEETS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1360
2SA1360
Audio Frequency Amplifier Applications
• Complementary to 2SC3423
• Small collector output capacitance: C
• High transition frequency: f
= 200 MHz (typ.)
T
= 2.5 pF (typ.)
ob
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Base current I
Collector power
dissipation
Junction temperature T
Storage temperature range T
(Tc = 25°C)
Ta = 25°C 1.2
Tc = 25° C
Electrical Characteristics
CBO
CEO
EBO
C
B
P
C
j
stg
(Tc = 25°C)
−150 V
−150 V
−5 V
−50 mA
−5 mA
5
150 °C
−55 to 150 °C
W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-8H1A
Weight: 0.82 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter breakdown voltage V
DC current gain
Collector-emitter saturation voltage V
Base-emitter voltage VBE VCE = −5 V, IC = −10 mA ― ― −0.8 V
Transition frequency fT VCE = −5 V, IC = −10 mA ― 200 ― MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 2.5 ― pF
VCB = −150 V, IE = 0 ― ― −0.1 µA
CBO
VEB = −5 V, IC = 0 ― ― −0.1 µA
EBO
(BR) CEOIC
h
FE
(Note)
CE (sat) IC
= −1 mA, IB = 0 −150 ― ― V
V
= −5 V, IC = −10 mA 80 ― 240
CE
= −10 mA, IB = −1 mA ― ― −1.0 V
Note: hFE classification O: 80 to 160, Y: 120 to 240
1
2004-07-07
Marking
2SA1360
Lot No.
A1360
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics indicator
Part No. (or abbreviation code)
2
2004-07-07
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