Philips 2sa1215 DATASHEETS
12
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SA1215
–160
–160
–5
–15
–4
150(Tc=25°C)
150
–55
to
+150
Unit
V
V
V
A
A
W
°C
°C
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1215
–100
max
–100max
–160min
50min∗
–2.0max
50typ
400typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
V
CB=–160V
V
EB=–5V
I
C=–25mA
V
CE=–4V, IC=–5A
I
C=–5A, IB=–0.5A
V
CE=–12V, IE=2A
V
CB=–10V, f=1MHz
V
CC
(V)
–60
R
L
(Ω)
12
I
C
(A)
–5
V
B2
(V)
5
IB2
(mA)
500
ton
(µs)
0.25typ
tstg
(µs)
0.85typ
tf
(µs)
0.2typ
IB1
(mA)
–500
LAPT 2SA1215
2
3
1.05
+0.2
-0.1
BE
5.45
±0.1
5.45
±0.1
2-ø3.2
±0.1
36.4
±0.3
9
24.4
±0.2
7
21.4
±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0
±0.2
2.1
a
b
C
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–4
–8
–12
–16
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–50mA
–100mA
I
B
=–20mA
–600mA
–500mA
–400mA
–300mA
–200mA
–150mA
–750mA
0
–3
–2
–1
0 –0.2 –0.4 –1.0–0.6 –0.8
Base Current I
B(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC =–10A
–5A
–0.02 –0.1 –1 –10–15
10
50
100
200
Collector Current I
C(A)
DC Current Gain hFE
(VCE=–4V)
Typ
Safe Operating Area (Single Pulse)
–2 –10 –100 –200
–0.2
–1
–0.5
–10
–40
–5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
10ms
fT–IE Characteristics
(Typical)
0.02 0.1 1 10
0
20
40
60
80
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current I
E(A)
Typ
1 10 100 1000 2000
Time t(ms)
0.1
1
2
0.5
Transient Thermal Resistance θj-a(˚C/W)
θj-a
–
t Characteristics
160
120
80
40
5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
0
–15
–10
–5
0–2–1
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5–0.5 –5 –10 –15
30
50
100
200
Collector Current I
C(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
With Infinite heatsink
Without Heatsink
∗hFE Rank O(50to100), P(70to140), Y(90to180)
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
(Ta=25°C)
(Ta=25°C)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921)
Application : Audio and General Purpose
External Dimensions MT-200
Weight : Approx 18.4g
a. Type No.
b. Lot No.
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