Philips 2sa1015 DATASHEETS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015
2SA1015
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
· High voltage and high current: V
I
· Excellent hFE linearity : h
FE (2)
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
· Low noise: NF = 1dB (typ.) (f = 1 kHz)
· Complementary to 2SC1815.
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC -150 mA
Base current IB -50 mA
Collector power dissipation PC 400 mW
Junction temperature T
Storage temperature range T
(Ta ==== 25°C)
Electrical Characteristics
= −50 V (min),
CEO
= −150 mA (max)
C
= 80 (typ.) at VCE = −6 V, IC = −150 mA
-50 V
CBO
-50 V
CEO
-5 V
EBO
j
stg
(Ta ==== 25°C)
125 °C
-55~125 °C
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
DC current gain
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency fT VCE = -10 V, IC = -1 mA 80 ¾ ¾ MHz
Collector output capacitance Cob VCB = -10 V, IE = 0, f = 1 MHz ¾ 4 7 pF
Base intrinsic resistance r
Noise figure NF
Note: h
classification O: 70~140, Y: 120~240, GR: 200~400
FE (1)
VCB = -50 V, IE = 0 ¾ ¾ -0.1 mA
CBO
VEB = -5 V, IC = 0 ¾ ¾ -0.1 mA
EBO
h
FE (1)
(Note)
h
VCE = -6 V, IC = -150 mA 25 80 ¾
FE (2)
IC = -100 mA, IB = -10 mA ¾ -0.1 -0.3 V
CE (sat)
IC = -100 mA, IB = -10 mA ¾ ¾ -1.1 V
BE (sat)
VCE = -10 V, IE = 1 mA, f = 30 MHz ¾ 30 ¾ W
bb’
= -6 V, IC = -2 mA 70 ¾ 400
V
CE
= -6 V, IC = -0.1 mA, RG = 10 kW,
V
CE
f = 1 kHz
¾ 1.0 10 dB
1
2003-03-27
2SA1015
2
2003-03-27
Loading...