Philips 2PD602AS, 2PD602AR, 2PD602AQ Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D114
2PD602A
NPN general purpose transistor
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 23
Philips Semiconductors Product specification
NPN general purpose transistor 2PD602A
FEATURES
• High current (max. 500 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in an SC-59 plastic package.
handbook, halfpage
PNP complement: 2PB710A.
MARKING
TYPE NUMBER MARKING CODE
2PD602AQ XQ
2PD602AR XR
2PD602AS XS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
3
12
Top view
3
1
2
MAM321
Fig.1 Simplified outline (SC-59) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23 2
Philips Semiconductors Product specification
NPN general purpose transistor 2PD602A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=60V − 10 nA
I
= 0; VCB=60V; Tj= 150 °C − 5 µA
E
emitter cut-off current IC= 0; VEB=4V − 10 nA
DC current gain IC= 150 mA; VCE= 10 V; note 1
2PD602AQ 85 170
2PD602AR 120 240
2PD602AS 170 340
DC current gain I
collector-emitter saturation
= 500 mA; VCE= 10 V; note 1 40 −
C
IC= 300 mA; IB= 30 mA; note 1 − 600 mV
voltage
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 15 pF
transition frequency IC= 50 mA; VCE=10V;
2PD602AQ 140 − MHz
f = 100 MHz; note 1
2PD602AR 160 − MHz
2PD602AS 180 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 23 3
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