![](/html/b3/b36d/b36d01eefa39125a6e357f64392bbe3b14b0646daf4f6d61ca679c5157347b46/bg1.png)
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D114
2PD602A
NPN general purpose transistor
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 23
![](/html/b3/b36d/b36d01eefa39125a6e357f64392bbe3b14b0646daf4f6d61ca679c5157347b46/bg2.png)
Philips Semiconductors Product specification
NPN general purpose transistor 2PD602A
FEATURES
• High current (max. 500 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in an SC-59 plastic package.
handbook, halfpage
PNP complement: 2PB710A.
MARKING
TYPE NUMBER MARKING CODE
2PD602AQ XQ
2PD602AR XR
2PD602AS XS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
3
12
Top view
3
1
2
MAM321
Fig.1 Simplified outline (SC-59) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23 2
![](/html/b3/b36d/b36d01eefa39125a6e357f64392bbe3b14b0646daf4f6d61ca679c5157347b46/bg3.png)
Philips Semiconductors Product specification
NPN general purpose transistor 2PD602A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=60V − 10 nA
I
= 0; VCB=60V; Tj= 150 °C − 5 µA
E
emitter cut-off current IC= 0; VEB=4V − 10 nA
DC current gain IC= 150 mA; VCE= 10 V; note 1
2PD602AQ 85 170
2PD602AR 120 240
2PD602AS 170 340
DC current gain I
collector-emitter saturation
= 500 mA; VCE= 10 V; note 1 40 −
C
IC= 300 mA; IB= 30 mA; note 1 − 600 mV
voltage
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 15 pF
transition frequency IC= 50 mA; VCE=10V;
2PD602AQ 140 − MHz
f = 100 MHz; note 1
2PD602AR 160 − MHz
2PD602AS 180 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 23 3