Philips 2PD601AW Technical data
查询2PD601AQW供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D114
2PD601AW
NPN general purpose transistor
Preliminary specification 2002 Jun 26
Philips Semiconductors Preliminary specification
NPN general purpose transistor 2PD601AW
FEATURES
• High collector current (max. 100 mA)
• Low collector-emitter saturation voltage (max. 500 mV).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in an SC-70 (SOT323) plastic package.
PNP complement: 2PB709AW.
MARKING
TYPE NUMBER MARKING CODE
(1)
2PD601AQW *6D
2PD601ARW *6E
2PD601ASW *6F
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
2
MAM062
Fig.1 Simplified outline SC-70 (SOT323)
and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. For mounting conditions, see
“Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
2002 Jun 26 2
Philips Semiconductors Preliminary specification
NPN general purpose transistor 2PD601AW
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. For mounting conditions, see
Handbook SC18”.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 625 K/W
“Thermal considerations and footprint design for SOT323 in the General Part of Data
collector-base cut-off current IE= 0; VCB=60V − 10 nA
I
= 0; VCB= 60 V; Tj= 150 °C − 5 µA
E
emitter-base cut-off current IC= 0; VEB=5V − 10 nA
DC current gain IC= 100 mA; VCE= 2 V; note 1 90 −
DC current gain I
= 2 mA; VCE=10V
C
2PD601AQW 160 260
2PD601ARW 210 340
2PD601ASW 290 460
collector-emitter saturation voltage IC= 100 mA; IB= 10 mA; note 1 − 500 mV
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 3.5 pF
transition frequency IC= 2 mA; VCE=10V;
2PD601AQW 100 − MHz
f = 100 MHz
2PD601ARW 120 − MHz
2PD601ASW 140 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2002 Jun 26 3
Loading...