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ook, halfpage
M3D114
2PD601AW
NPN general purpose transistor
Preliminary specification 2002 Jun 26
Philips Semiconductors Preliminary specification
NPN general purpose transistor 2PD601AW
FEATURES
• High collector current (max. 100 mA)
• Low collector-emitter saturation voltage (max. 500 mV).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in an SC-70 (SOT323) plastic package.
PNP complement: 2PB709AW.
MARKING
TYPE NUMBER MARKING CODE
(1)
2PD601AQW *6D
2PD601ARW *6E
2PD601ASW *6F
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
2
MAM062
Fig.1 Simplified outline SC-70 (SOT323)
and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. For mounting conditions, see
“Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
2002 Jun 26 2
Philips Semiconductors Preliminary specification
NPN general purpose transistor 2PD601AW
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. For mounting conditions, see
Handbook SC18”.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 625 K/W
“Thermal considerations and footprint design for SOT323 in the General Part of Data
collector-base cut-off current IE= 0; VCB=60V − 10 nA
I
= 0; VCB= 60 V; Tj= 150 °C − 5 µA
E
emitter-base cut-off current IC= 0; VEB=5V − 10 nA
DC current gain IC= 100 mA; VCE= 2 V; note 1 90 −
DC current gain I
= 2 mA; VCE=10V
C
2PD601AQW 160 260
2PD601ARW 210 340
2PD601ASW 290 460
collector-emitter saturation voltage IC= 100 mA; IB= 10 mA; note 1 − 500 mV
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 3.5 pF
transition frequency IC= 2 mA; VCE=10V;
2PD601AQW 100 − MHz
f = 100 MHz
2PD601ARW 120 − MHz
2PD601ASW 140 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2002 Jun 26 3
Philips Semiconductors Preliminary specification
NPN general purpose transistor 2PD601AW
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT323
D
y
3
A
12
e
b
1
p
e
w M
B
E
H
E
A
1
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max
0.1
1
b
cD
p
0.4
0.25
0.10
2.2
1.8
0.3
IEC JEDEC EIAJ
E
1.35
1.15
REFERENCES
1.3
e
e
1
0.65
UNIT
A
1.1
mm
0.8
OUTLINE
VERSION
SOT323 SC-70
2002 Jun 26 4
H
E
2.2
2.0
L
p
0.45
0.15
Qwv
0.23
0.13
0.20.2
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors Preliminary specification
NPN general purpose transistor 2PD601AW
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
(1)
STATUS
(2)
DEFINITIONS
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at anyotherconditions above those giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty that such applications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto result inpersonal injury. Philips
Semiconductorscustomersusingor selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of theseproducts,conveysno licence or title
under any patent, copyright, or mask work right to these
products,and makes no representationsorwarranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Jun 26 5
Philips Semiconductors Preliminary specification
NPN general purpose transistor 2PD601AW
NOTES
2002 Jun 26 6
Philips Semiconductors Preliminary specification
NPN general purpose transistor 2PD601AW
NOTES
2002 Jun 26 7
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Jun 26 Document order number: 9397 750 09757
SCA74
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