Philips 2pd601a DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D114
2PD601A
NPN general purpose transistor
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 23
Philips Semiconductors Product specification
NPN general purpose transistor 2PD601A
FEATURES
• Low current (max. 100 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
NPN transistor in an SC-59 plastic package.
PNP complement: 2PB709A.
MARKING
TYPE NUMBER MARKING CODE
2PD601AQ ZQ
2PD601AR ZR
2PD601AS ZS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
3
12
Top view
3
1
2
MAM321
Fig.1 Simplified outline (SC-59) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23 2
Philips Semiconductors Product specification
NPN general purpose transistor 2PD601A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=60V − 10 nA
I
= 0; VCB=60V; Tj= 150 °C − 5 µA
E
emitter cut-off current IC= 0; VEB=5V − 10 nA
DC current gain IC= 100 mA; VCE= 2 V; note 1 90 −
DC current gain I
= 2 mA; VCE= 10 V; note 1
C
2PD601AQ 160 260
2PD601AR 210 340
2PD601AS 290 460
collector-emitter saturation voltage IC= 100 mA; IB= 10 mA; note 1 − 500 mV
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 3.5 pF
transition frequency IC= 2 mA; VCE=10V;
2PD601AQ 100 − MHz
f = 100 MHz
2PD601AR 120 − MHz
2PD601AS 140 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 23 3
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