Philips 2PD2150 User Manual

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2PD2150

20 V, 3 A NPN low V

Rev. 01 — 22 April 2005 Product data sheet

1. Product proﬁle

1.1 General description

NPN low V TO-243) SMD plastic package.

PNP complement: 2PB1424.

1.2 Features

■ Low collector-emitter saturation voltage V

■ High collector current capability: IC and I

■ High collector current gain (hFE) at high I

■ High efﬁciency due to less heat generation

■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

CEsat

Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/

CEsat

(BISS) transistor

CEsat

CM

C

1.3 Applications

■ DC-to-DC conversion

■ MOSFET gate driving

■ Motor control

■ Charging circuits

■ Power switches (e.g. motors, fans)

■ Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V I

h

CEO

CM

FE

collector-emitter voltage open base - - 20 V peak collector current single pulse;

t

≤ 1ms

p

DC current gain VCE=2V;

I

= 0.1 A

C

--3A

180 - 390

Philips Semiconductors

2PD2150

2. Pinning information

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1 emitter 2 collector 3 base

3. Ordering information

Table 3: Ordering information

Type number Package

2PD2150 SC-62 plastic surface mounted package; collector pad for

20 V, 3 A NPN low V

321

Name Description Version

good heat transfer; 3 leads

(BISS) transistor

CEsat

3

2

1

sym042

SOT89

4. Marking

Table 4: Marking codes

Type number Marking code

2PD2150 M2

Product data sheet Rev. 01 — 22 April 2005 2 of 11

Philips Semiconductors

2PD2150

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CBO

V

CEO

V

EBO

I

C

I

CM

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

20 V, 3 A NPN low V

(BISS) transistor

CEsat

collector-base voltage open emitter - 40 V collector-emitter voltage open base - 20 V emitter-base voltage open collector - 5 V collector current (DC) - 1 A peak collector current single pulse;

t

≤ 1ms

p

total power dissipation T

amb

≤ 25 °C

-3A

[1]

- 500 mW

[2]

- 850 mW

[3]

- 1200 mW junction temperature - 150 °C ambient temperature −65 +150 °C storage temperature −65 +150 °C

1600

P

tot

(mW)

1200

800

400

0

−65 −35 175115−5 55 14525 85

(1) FR4 PCB; mounting pad for collector 6cm (2) FR4 PCB; mounting pad for collector 1cm (3) FR4 PCB; standard footprint

Fig 1. Power derating curves

006aaa449

(1)

(2)

(3)

Tamb (°C)

2 2

Product data sheet Rev. 01 — 22 April 2005 3 of 11

Philips Semiconductors

2PD2150

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

thermal resistance from junction to ambient

thermal resistance from junction to solder point

10

Z

th(j-a)

(K/W)

10

3

2

10

1

duty cycle =

1.00

0.75

0.50

0.33

0.20

0.10

0.05

0.02

0.01

0.00

R

th(j-a)

R

th(j-sp)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 m2.

in free air

20 V, 3 A NPN low V

[1]

- - 250 K/W

[2]

- - 147 K/W

[3]

- - 104 K/W

--20K/W

(BISS) transistor

CEsat

006aaa450

−1

10

−5

10

−4

10

−3

10

FR4 PCB; mounting pad for collector 1 cm

−2

2

−1

10

1

1010

2

10

tp (s)

3

10

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values

Product data sheet Rev. 01 — 22 April 2005 4 of 11