Philips 2PD2150 User Manual
2PD2150
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
Rev. 01 — 22 April 2005 |
Product data sheet |
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1.Product profile
1.1General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
PNP complement: 2PB1424.
1.2Features
■Low collector-emitter saturation voltage VCEsat
■High collector current capability: IC and ICM
■High collector current gain (hFE) at high IC
■High efficiency due to less heat generation
■Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3Applications
■DC-to-DC conversion
■MOSFET gate driving
■Motor control
■Charging circuits
■Power switches (e.g. motors, fans)
■Thin Film Transistor (TFT) backlight inverter
1.4Quick reference data
Table 1: |
Quick reference data |
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Symbol |
Parameter |
Conditions |
Min |
Typ |
Max |
Unit |
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VCEO |
collector-emitter voltage |
open base |
- |
- |
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20 |
V |
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ICM |
peak collector current |
single pulse; |
- |
- |
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3 |
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A |
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tp ≤ 1 ms |
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hFE |
DC current gain |
VCE = 2 V; |
180 |
- |
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390 |
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IC = 0.1 A |
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Philips Semiconductors |
2PD2150 |
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20 V, 3 A NPN low VCEsat (BISS) transistor |
2. Pinning information
Table 2: |
Pinning |
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Pin |
Description |
Simplified outline |
Symbol |
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1 |
emitter |
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2 |
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2 |
collector |
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3 |
base |
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3 |
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1 |
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3 |
2 |
1 |
sym042 |
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3. Ordering information
Table 3: Ordering information
Type number |
Package |
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Name |
Description |
Version |
2PD2150 |
SC-62 |
plastic surface mounted package; collector pad for |
SOT89 |
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good heat transfer; 3 leads |
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4. Marking
Table 4: Marking codes
Type number |
Marking code |
2PD2150 |
M2 |
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9397 750 14987 |
© Koninklijke Philips Electronics N.V. 2005. All rights reserved. |
Product data sheet |
Rev. 01 — 22 April 2005 |
2 of 11 |
Philips Semiconductors |
2PD2150 |
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20 V, 3 A NPN low VCEsat (BISS) transistor |
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol |
Parameter |
Conditions |
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Min |
Max |
Unit |
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VCBO |
collector-base voltage |
open emitter |
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- |
40 |
V |
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VCEO |
collector-emitter voltage |
open base |
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- |
20 |
V |
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VEBO |
emitter-base voltage |
open collector |
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- |
5 |
V |
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IC |
collector current (DC) |
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- |
1 |
A |
ICM |
peak collector current |
single pulse; |
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3 |
A |
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tp ≤ 1 ms |
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Ptot |
total power dissipation |
Tamb ≤ 25 °C |
[1] |
- |
500 |
mW |
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[2] |
- |
850 |
mW |
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[3] |
- |
1200 |
mW |
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Tj |
junction temperature |
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- |
150 |
°C |
Tamb |
ambient temperature |
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−65 |
+150 |
°C |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
1600 |
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006aaa449 |
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Ptot |
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(mW) |
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1200 |
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(1) |
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(2) |
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800 |
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(3) |
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400 |
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0 |
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−65 |
−35 |
−5 |
25 |
55 |
85 |
115 |
145 |
175 |
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Tamb (°C) |
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(1)FR4 PCB; mounting pad for collector 6 cm2
(2)FR4 PCB; mounting pad for collector 1 cm2
(3)FR4 PCB; standard footprint
Fig 1. Power derating curves
9397 750 14987 |
© Koninklijke Philips Electronics N.V. 2005. All rights reserved. |
Product data sheet |
Rev. 01 — 22 April 2005 |
3 of 11 |
Philips Semiconductors |
2PD2150 |
||
|
|
|
20 V, 3 A NPN low VCEsat (BISS) transistor |
6. Thermal characteristics
Table 6: |
Thermal characteristics |
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Symbol |
Parameter |
Conditions |
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Min |
Typ |
Max |
Unit |
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Rth(j-a) |
thermal resistance from |
in free air |
[1] |
- |
- |
250 |
K/W |
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junction to ambient |
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[2] |
- |
- |
147 |
K/W |
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[3] |
- |
- |
104 |
K/W |
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Rth(j-sp) |
thermal resistance from |
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- |
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20 |
K/W |
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junction to solder point |
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[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 m2.
103 |
006aaa450 |
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Zth(j-a)
(K/W) |
duty cycle = |
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102 |
1.00 |
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0.75 |
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0.50 |
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0.33 |
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0.20 |
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10 |
0.10 |
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0.05 |
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0.02 |
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1 |
0.01 |
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0.00 |
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10−1 |
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10−4 |
10−3 |
10−2 |
10−1 |
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102 |
103 |
10−5 |
1 |
10 |
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tp (s) |
FR4 PCB; mounting pad for collector 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14987 |
© Koninklijke Philips Electronics N.V. 2005. All rights reserved. |
Product data sheet |
Rev. 01 — 22 April 2005 |
4 of 11 |
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