Philips 2PD1820AS, 2PD1820AR, 2PD1820AG Datasheet
DATA SH EET
Product specification
Supersedes data of 1997 May 22
1999 Apr 12
DISCRETE SEMICONDUCTORS
2PD1820A
NPN general purpose transistor
ook, halfpage
M3D187
1999 Apr 12 2
Philips Semiconductors Product specification
NPN general purpose transistor 2PD1820A
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V)
• Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
• General purpose switching and amplification, especially
for portable equipment.
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
PNP complement: 2PB1219A.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
TYPE NUMBER MARKING CODE
(1)
2PD1820AQ A∗Q
2PD1820AR A∗R
2PD1820AS A∗S
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SC-70; SOT323) and
symbol.
handbook, halfpage
MAM336
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 60 V
V
CEO
collector-emitter voltage open base − 50 V
V
EBO
emitter-base voltage open collector − 5V
I
C
collector current (DC) − 500 mA
I
CM
peak collector current − 1A
I
BM
peak base current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
1999 Apr 12 3
Philips Semiconductors Product specification
NPN general purpose transistor 2PD1820A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB=20V − 10 nA
I
E
= 0; VCB=20V; Tj= 150 °C − 5 µA
I
EBO
emitter cut-off current IC= 0; VEB=4V − 10 nA
h
FE
DC current gain IC= 150 mA; VCE= 10 V; note 1
2PD1820AQ 85 170
2PD1820AR 120 240
2PD1820AS 170 340
h
FE
DC current gain IC= 500 mA; VCE= 10 V; note 1 40 −
V
CEsat
collector-emitter saturation voltage IC= 300 mA; IB= 30 mA; note 1 − 600 mV
C
c
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 15 pF
f
T
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz;
note 1
150 − MHz
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