Philips 2PD1820AQ Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
2PD1820A
NPN general purpose transistor
Product specification
Supersedes data of 1997 May 22
1999 Apr 12
Philips Semiconductors Product specification
NPN general purpose transistor 2PD1820A
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V)
• Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
• General purpose switching and amplification, especially
for portable equipment.
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
PNP complement: 2PB1219A.
MARKING
TYPE NUMBER MARKING CODE
(1)
2PD1820AQ A∗Q
2PD1820AR A∗R
2PD1820AS A∗S
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM336
Fig.1 Simplified outline (SC-70; SOT323) and
symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12 2
Philips Semiconductors Product specification
NPN general purpose transistor 2PD1820A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB=20V − 10 nA
I
= 0; VCB=20V; Tj= 150 °C − 5 µA
E
emitter cut-off current IC= 0; VEB=4V − 10 nA
DC current gain IC= 150 mA; VCE= 10 V; note 1
2PD1820AQ 85 170
2PD1820AR 120 240
2PD1820AS 170 340
DC current gain IC= 500 mA; VCE= 10 V; note 1 40 −
collector-emitter saturation voltage IC= 300 mA; IB= 30 mA; note 1 − 600 mV
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 15 pF
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz;
150 − MHz
note 1
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 12 3
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