Philips 2PC945Q, 2PC945P, 2PC945K Datasheet
DATA SH EET
Product specification
Supersedes data of 1997 Mar 26
1999 May 28
DISCRETE SEMICONDUCTORS
2PC945
NPN general purpose transistor
dbook, halfpage
M3D186
1999 May 28 2
Philips Semiconductors Product specification
NPN general purpose transistor 2PC945
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-92 (SOT54) plastic package.
PNP complement: 2PA733.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM259
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).s
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 60 V
V
CEO
collector-emitter voltage open base − 50 V
V
EBO
emitter-base voltage open collector − 5V
I
C
collector current (DC) − 100 mA
I
CM
peak collector current − 200 mA
I
BM
peak base current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 500 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
1999 May 28 3
Philips Semiconductors Product specification
NPN general purpose transistor 2PC945
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB=60V −−100 nA
I
EBO
emitter cut-off current IC= 0; VEB=5V −−100 nA
h
FE
DC current gain IC= 0.1 mA; VCE=6V 50 −−
h
FE
DC current gain IC= 1 mA; VCE=6V
2PC945P 200 − 400
V
CEsat
collector-emitter saturation voltage IC= 100 mA; IB=10mA −−300 mV
V
BEsat
base-emitter saturation voltage IC= 100 mA; IB=10mA −−1.1 V
V
BE
base-emitter voltage IC= 1 mA; VCE= 6 V 600 − 700 mV
C
c
collector capacitance IE=ie=0; VCB=6V; f=1MHz −−4pF
C
e
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 11 − pF
f
T
transition frequency IC= 10 mA; VCE= 6 V; f = 100 MHz 150 − 450 MHz
F noise figure I
C
= 200 µA; VCE=5V; RS=2kΩ
f = 1 kHz, B = 200 Hz
−−15 dB
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