Philips 2PC945 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
dbook, halfpage
M3D186
2PC945
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 26
1999 May 28
Philips Semiconductors Product specification
NPN general purpose transistor 2PC945
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 50 V).
PINNING
PIN DESCRIPTION
1 base
2 collector
APPLICATIONS
3 emitter
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-92 (SOT54) plastic package.
PNP complement: 2PA733.
handbook, halfpage
1
2
3
MAM259
2
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).s
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 28 2
Philips Semiconductors Product specification
NPN general purpose transistor 2PC945
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB=60V −−100 nA
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 0.1 mA; VCE=6V 50 −−
DC current gain IC= 1 mA; VCE=6V
2PC945P 200 − 400
collector-emitter saturation voltage IC= 100 mA; IB=10mA −−300 mV
base-emitter saturation voltage IC= 100 mA; IB=10mA −−1.1 V
base-emitter voltage IC= 1 mA; VCE= 6 V 600 − 700 mV
collector capacitance IE=ie=0; VCB=6V; f=1MHz −−4pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 11 − pF
transition frequency IC= 10 mA; VCE= 6 V; f = 100 MHz 150 − 450 MHz
= 200 µA; VCE=5V; RS=2kΩ
C
−−15 dB
f = 1 kHz, B = 200 Hz
1999 May 28 3
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