Philips 2PC4617Q, 2PC4617S Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D173
2PC4617
NPN general purpose transistor
Product specification
Supersedes data of 1998 Jul 21
1999 May 21
Philips Semiconductors Product specification
NPN general purpose transistor 2PC4617
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification in
communication, electronic data processing (EDP) and
consumer applications.
DESCRIPTION
NPN transistor in an SC-75 plastic package.
PNP complement: 2PA1774.
MARKING
TYPE NUMBER MARKING CODE
2PC4617Q ZQ
2PC4617R ZR
2PC4617S ZS
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
12
Top view
3
Fig.1 Simplified outline (SC-75) and symbol.
3
1
2
MAM348
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 150 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 21 2
Philips Semiconductors Product specification
NPN general purpose transistor 2PC4617
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 833 K/W
collector cut-off current IE= 0; VCB=30V − 100 nA
I
= 0; VCB=30V; Tj= 150 °C − 5 µA
E
emitter cut-off current IC= 0; VEB=4V − 100 nA
DC current gain IC= 1 mA; VCE= 6 V; note 1
2PC4617 120 560
2PC4617Q 120 270
2PC4617R 180 390
2PC4617S 270 560
collector-emitter saturation voltage IC= 50 mA; IB= 5 mA; note 1 − 200 mV
collector capacitance IE=ie= 0; VCB= 12 V; f = 1 MHz − 1.5 pF
transition frequency IC= 2 mA; VCE= 12 V; f = 100 MHz;
100 − MHz
note 1
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 May 21 3
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