Philips 2PC4617JS, 2PC4617JR, 2PC4617JQ Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D425
2PC4617J
NPN general purpose transistor
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 04
Philips Semiconductors Preliminary specification
NPN general purpose transistor 2PC4617J
FEATURES
• Power dissipation comparable to SOT23
• Low output capacitance
• Low saturation voltage V
CEsat
• Low current (max. 100 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification in
miniaturized application areas such as telecom and
multimedia.
DESCRIPTION
NPN transistor encapsulated in an ultra small plastic
SMD SC-89 (SOT490) package.
PNP complement: 2PA1774J.
MARKING
TYPE NUMBER MARKING CODE
2PC4617JQ ZQ
2PC4617JR ZR
2PC4617JS ZS
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
12
Top view
3
MAM410
3
1
2
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
1999 May 04 2
Philips Semiconductors Preliminary specification
NPN general purpose transistor 2PC4617J
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-a
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient in free air; note 1 500 K/W
collector cut-off current IE= 0; VCB=30V − 100 nA
I
= 0; VCB=30V; Tj= 150 °C − 5 µA
E
emitter cut-off current IC= 0; VEB=4V − 100 nA
DC current gain IC= 1 mA; VCE= 6 V; note 1
2PC4617JQ 120 270
2PC4617JR 180 390
2PC4617JS 270 560
collector-emitter saturation
IC= 50 mA; IB= 5 mA; note 1 − 200 mV
voltage
collector capacitance IE=ie= 0; VCB= 12 V; f = 1 MHz − 1.5 pF
transition frequency IC= 2 mA; VCE= 12 V; f = 100 MHz;
100 − MHz
note 1
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 May 04 3
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