Philips 2pc4081 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
2PC4081
NPN general purpose transistor
Product specification
Supersedes data of 1997 Jul 04
1999 Apr 08
Philips Semiconductors Product specification
NPN general purpose transistor 2PC4081
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• General purpose switching
• Small signal amplification.
DESCRIPTION
NPN transistor in an SC-70 plastic package.
PNP complement: 2PA1576.
MARKING
TYPE NUMBER MARKING CODE
2PC4081Q Z∗Q
2PC4081R Z∗R
2PC4081S Z∗S
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
2
MAM062
Fig.1 Simplified outline (SC-70) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 08 2
Philips Semiconductors Product specification
NPN general purpose transistor 2PC4081
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB=30V −−100 nA
I
= 0; VCB= 30 V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB=4V −−100 nA
DC current gain IC= 1 mA; VCE=6V
2PC4081Q 120 − 270
2PC4081R 180 − 390
2PC4081S 270 − 560
collector-emitter saturation voltage IC= 50 mA; IB= 5 mA; note 1 −−400 mV
collector capacitance IE=ie= 0; VCB= 12 V; f = 1 MHz − 2 3.5 pF
transition frequency IC= 2 mA; VCE= 12 V; f = 100 MHz 100 −−MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 08 3
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