Philips 2PC1815 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
2PC1815
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 28
1999 May 28
Philips Semiconductors Product specification
NPN general purpose transistor 2PC1815
FEATURES
• Low current (max. 150 mA)
• Low voltage (max. 50 V).
PINNING
PIN DESCRIPTION
1 base
2 collector
APPLICATIONS
3 emitter
• General purpose switching and amplification,
e.g. audio amplifier driver stages.
handbook, halfpage
DESCRIPTION
1
2
3
2
1
NPN transistor in a TO-92 (SOT54) plastic package.
PNP complement: 2PA1015.
MAM259
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
collector current (DC) − 150 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 28 2
Philips Semiconductors Product specification
NPN general purpose transistor 2PC1815
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BEsat
C
c
f
T
F noise figure I
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB=60V −−100 nA
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 150 mA; VCE=6V 25 −−
DC current gain IC= 2 mA; VCE=6V
2PC1815 120 − 700
2PC1815Y 120 − 240
2PC1815GR 200 − 400
2PC1815BL 350 − 700
collector-emitter saturation voltage IC= 100 mA; IB=10mA −−300 mV
base-emitter saturation voltage IC= 100 mA; IB=10mA −−1.1 V
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 2.5 3.5 pF
transition frequency IC= 1 mA; VCE= 6 V; f = 100 MHz 80 −−MHz
= 200 µA; VCE=5V;
C
−−10 dB
RS=2kΩ; f = 1 kHz
1999 May 28 3
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