Philips 2PB710AS, 2PB710AR, 2PB710AQ Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D114
2PB710A
PNP general purpose transistor
Product specification
Supersedes data of 1999 Apr 23
1999 May 31
Philips Semiconductors Product specification
PNP general purpose transistor 2PB710A
FEATURES
• High current (max. 500 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in an SC-59 plastic package.
handbook, halfpage
NPN complement: 2PD602A.
MARKING
TYPE NUMBER MARKING CODE
2PB710AQ DQ
2PB710AR DR
2PB710AS DS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
3
12
Top view
3
1
2
MAM322
Fig.1 Simplified outline (SC-59) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−60 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−5V
collector current (DC) −−500 mA
peak collector current −−1A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 31 2
Philips Semiconductors Product specification
PNP general purpose transistor 2PB710A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −60 V −−10 nA
I
= 0; VCB= −60 V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB= −5V −−10 nA
DC current gain IC= −150 mA; VCE= −10 V; note 1
2PB710AQ 85 170
2PB710AR 120 240
2PB710AS 170 340
DC current gain I
= −500 mA; VCE= −10 V; note 1 40 −
C
collector-emitter saturation voltage IC= −300 mA; IB= −30 mA; note 1 −−600 mV
base-emitter saturation voltage IC= −300 mA; IB= −30 mA; note 1 −−1.5 V
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 15 pF
transition frequency IC= −50 mA; VCE= −10 V;
2PB710AQ 100 − MHz
f = 100 MHz; note 1
2PB710AR 120 − MHz
2PB710AS 140 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 May 31 3
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