Philips 2PB709AS, 2PB709AR, 2PB709AQ Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D114
2PB709A
PNP general purpose transistor
Product specification
Supersedes data of 1997 Jun 19
1999 Apr 23
Philips Semiconductors Product specification
PNP general purpose transistor 2PB709A
FEATURES
• Low current (max. 100 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
PNP transistor in an SC-59 plastic package.
NPN complement: 2PB601A.
MARKING
TYPE NUMBER MARKING CODE
2PB709AQ BQ
2PB709AR BR
2PB709AS BS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
3
12
Top view
3
1
2
MAM322
Fig.1 Simplified outline (SC-59) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−45 V
collector-emitter voltage open base −−45 V
emitter-base voltage open collector −−6V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23 2
Philips Semiconductors Product specification
PNP general purpose transistor 2PB709A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −45 V −−10 nA
I
= 0; VCB= −45 V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB= −5V −−10 nA
DC current gain IC= −2 mA; VCE= −10 V
2PB709AQ 160 260
2PB709AR 210 340
2PB709AS 290 460
collector-emitter saturation
IC= −100 mA; IB= −10 mA; note 1 −−500 mV
voltage
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 5pF
transition frequency IC= −1 mA; VCE= −10 V; f = 100 MHz
2PB709AQ 60 − MHz
2PB709AR 70 − MHz
2PB709AS 80 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 23 3
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