Philips 2pb1219a DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D187
2PB1219A
PNP general purpose transistor
Product specification
Supersedes data of 1997 Mar 25
1999 Apr 12
Philips Semiconductors Product specification
PNP general purpose transistor 2PB1219A
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V)
• Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323; SC70 plastic package.
NPN complement: 2PD1820A.
MARKING
TYPE NUMBER MARKING CODE
(1)
2PB1219AQ D∗Q
2PB1219AR D∗R
2PB1219AS D∗S
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
2
MAM048
Fig.1 Simplified outline (SOT323; SC70)
and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−60 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−5V
collector current (DC) −−500 mA
peak collector current −−1A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SOT323; SC70 standard mounting conditions.
1999 Apr 12 2
Philips Semiconductors Product specification
PNP general purpose transistor 2PB1219A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to SOT323; SC70 standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BEsat
C
c
f
T
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB= −20 V −−100 nA
I
= 0; VCB= −20 V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB= −4V −−100 nA
DC current gain IC= −150 mA; VCE= −10 V; note 1
2PB1219AQ 85 170
2PB1219AR 120 240
2PB1219AS 170 340
DC current gain IC= −500 mA; VCE= −10 V; note 1 40 −
collector-emitter saturation voltage IC= −300 mA; IB= −30 mA; note 1 −−600 mV
base-emitter saturation voltage IC= −300 mA; IB= −30 mA; note 1 −−1.5 V
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 15 pF
transition frequency IC= 50 mA; VCE= −10 V;
2PB1219AQ 100 − MHz
f = 100 MHz; note 1
2PB1219AR 120 − MHz
2PB1219AS 140 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 12 3
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