Philips 2PA733P, 2PA733 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
2PA733
PNP general purpose transistor
Product specification
Supersedes data of 1998 Jul 21
1999 May 28
Philips Semiconductors Product specification
PNP general purpose transistor 2PA733
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 50 V).
PINNING
PIN DESCRIPTION
1 base
2 collector
APPLICATIONS
3 emitter
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92 (SOT54) plastic package.
NPN complement: 2PC945.
handbook, halfpage
1
2
3
MAM285
2
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−60 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 28 2
Philips Semiconductors Product specification
PNP general purpose transistor 2PA733
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless other specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB= −60 V −−−100 nA
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −1 mA; VCE= −6V
2PA733P 200 − 400
collector-emitter saturation voltage IC= −100 mA; IB= −10 mA −−−300 mV
base-emitter voltage IC= −1 mA; VCE= −6V −600 −−700 mV
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 4.5 6 pF
emitter capacitance IC=ic= 0; VEB= −0.5 V; f = 1 MHz − 10 − pF
transition frequency IC= −10 mA; VCE= −6 V; f = 100 MHz 100 180 − MHz
= −200 µA; VCE= −5 V; RS=2kΩ;
C
−−10 dB
f = 1 kHz; B = 100 Hz
1999 May 28 3
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