Philips 2pa1576 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
2PA1576
PNP general purpose transistor
Product specification
Supersedes data of 1997 Mar 28
1999 May 31
Philips Semiconductors Product specification
PNP general purpose transistor 2PA1576
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V)
• Low collector capacitance (typ. 2.5 pF).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SC-70 (SOT323) plastic package.
NPN complement: 2PC4081.
MARKING
TYPE NUMBER MARKING CODE
2PA1576Q F∗Q
2PA1576R F∗R
2PA1576S F∗S
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
2
Fig.1 Simplified outline (SC-70; SOT323)
and symbol.
3
1
2
MAM048
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SC-70 (SOT323) standard mounting conditions.
1999 May 31 2
Philips Semiconductors Product specification
PNP general purpose transistor 2PA1576
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-a
Note
1. Refer to SC-70 (SOT323) standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB= −30 V −−−100 nA
I
= 0; VCB= −30 V; Tj= 150 °C −−−5µA
E
emitter cut-off current IC= 0; VEB= −4V −−−100 nA
DC current gain IC= −1 mA; VCE= −6V
2PA1576Q 120 − 270
2PA1576R 180 − 390
2PA1576S 270 − 560
saturation voltage IC= −50 mA; IB= −5 mA; note 1 −−−500 mV
collector capacitance IE=ie= 0; VCB= −12 V; f = 1 MHz − 2.5 3.5 pF
transition frequency IC= −2 mA; VCE= −12 V; f = 100 MHz 100 −−MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 May 31 3
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