Philips 2PA1015Y Datasheet
DATA SH EET
Product specification
Supersedes data of 1997 May 01
1999 Apr 08
DISCRETE SEMICONDUCTORS
2PA1015
PNP general purpose transistor
ook, halfpage
M3D186
1999 Apr 08 2
Philips Semiconductors Product specification
PNP general purpose transistor 2PA1015
FEATURES
• Low current (max. 150 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a plastic TO-92; SOT54 package.
NPN complement: 2PC1815.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM285
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter −−50 V
V
CEO
collector-emitter voltage open base −−50 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−150 mA
I
CM
peak collector current −−200 mA
I
BM
peak base current −−200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 500 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
1999 Apr 08 3
Philips Semiconductors Product specification
PNP general purpose transistor 2PA1015
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB= −50 V −−−100 nA
I
EBO
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
h
FE
DC current gain IC= −2 mA; VCE= −6V
2PA1015Y 120 − 240
2PA1015GR 200 − 400
h
FE
DC current gain IC= −150 mA; VCE= −6V 25 −−
V
CEsat
collector-emitter saturation voltage IC= −100 mA; IB= −10 mA −−−300 mV
V
BEsat
base-emitter saturation voltage IC= −100 mA; IB= −10 mA −−−1.1 V
C
c
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 47pF
f
T
transition frequency IC= −1 mA; VCB= −10 V; f = 100 MHz 80 −−MHz
F noise figure I
C
= −200 µA; VCE= −5 V; RS=2kΩ;
f = 1 kHz; B = 200 Hz
−−10 dB
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