Philips 2PA1015 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
2PA1015
PNP general purpose transistor
Product specification
Supersedes data of 1997 May 01
1999 Apr 08
Philips Semiconductors Product specification
PNP general purpose transistor 2PA1015
FEATURES
• Low current (max. 150 mA)
• Low voltage (max. 50 V).
PINNING
PIN DESCRIPTION
1 base
2 collector
APPLICATIONS
3 emitter
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a plastic TO-92; SOT54 package.
NPN complement: 2PC1815.
handbook, halfpage
1
2
3
MAM285
2
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−5V
collector current (DC) −−150 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 08 2
Philips Semiconductors Product specification
PNP general purpose transistor 2PA1015
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BEsat
C
c
f
T
F noise figure I
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB= −50 V −−−100 nA
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −2 mA; VCE= −6V
2PA1015Y 120 − 240
2PA1015GR 200 − 400
DC current gain IC= −150 mA; VCE= −6V 25 −−
collector-emitter saturation voltage IC= −100 mA; IB= −10 mA −−−300 mV
base-emitter saturation voltage IC= −100 mA; IB= −10 mA −−−1.1 V
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 47pF
transition frequency IC= −1 mA; VCB= −10 V; f = 100 MHz 80 −−MHz
= −200 µA; VCE= −5 V; RS=2kΩ;
C
−−10 dB
f = 1 kHz; B = 200 Hz
1999 Apr 08 3
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