Philips 2N7002F User Guide

查询2N7002F供应商

M3D088

1. Description

2. Features

2N7002F

TrenchMOS™ Logic Level FET

Rev. 01 — 11 February 2002 Product data

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.

Product availability:

2N7002F in SOT23.

■ TrenchMOS™ technology

■ Very fast switching

■ Logic level compatible

■ Subminiature surface mount package.

3. Applications

■ Relay driver

■ High speed line driver

■ Logic level translator.

4. Pinning information

Table 1: Pinning - SOT23, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 source (s)
3 drain (d)

3

03ab44

12

SOT23

d

g

03ab30

s

1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

Philips Semiconductors

2N7002F

TrenchMOS™ Logic Level FET

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I

D

P
T
R

DS

tot
j
DSon

drain-source voltage (DC) Tj=25to150°C - 60 V
drain current (DC) Tsp=25°C; VGS= 10 V - 475 mA
total power dissipation Tsp=25°C - 0.83 W
junction temperature - 150 °C
drain-source on-state resistance VGS= 10 V; ID= 500 mA; Tj= 25 1.7 2 Ω

= 4.5 V; ID= 75 mA; Tj= 25 2.25 4 Ω

V

GS

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

V

GSM

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) Tj=25to150°C - 60 V
drain-gate voltage (DC) Tj=25to150°C; RGS=20kΩ -60V
gate-source voltage (DC) - ±30 V
peak gate-source voltage tp≤ 50 µs; pulsed; duty cycle = 25% - ±40 V
drain current (DC) Tsp=25°C; VGS=10V;Figure 2 and 3 - 475 mA

= 100 °C; VGS=10V;Figure 2 - 300 mA

T

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; Figure 3 - 1.9 A
total power dissipation Tsp=25°C; Figure 1 - 0.83 W
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C

source (diode forward) current (DC) Tsp=25°C - 475 mA
peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs - 1.9 A

9397 750 09096

Product data Rev. 01 — 11 February 2002 2 of 11

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

2N7002F

TrenchMOS™ Logic Level FET

120

P

der

(%)

80

40

0

0 50 100 150 200

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×=

03aa17

T

(oC)

sp

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

10

120

I

der

(%)

80

40

0

0 50 100 150 200

03aa25

(oC)

T

sp

VGS≥ 4.5 V

I

D

I

-------------------

der

I

D25C

()

100%×=

°

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03ai11

I

D

(A)

R

= V

DS

/ I

D

DC

(V)

V

DS

1

-1

10

-2

10

1 10 10

DSon

tp = 10 ms

100 ms

1 ms

10 ms

100 ms

2

Tsp=25°C; IDM is single pulse; VGS = 10 V.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 09096

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Product data Rev. 01 — 11 February 2002 3 of 11

Philips Semiconductors

2N7002F

TrenchMOS™ Logic Level FET

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

R

th(j-a)

thermal resistance from junction to solder point mounted on a metal clad board; Figure 4 - - 150 K/W
thermal resistance from junction to ambient mounted on a printed circuit board;

- - 350 K/W

minimum footprint

7.1 Transient thermal impedance

10

Z

th(j-sp)

K/W

10

10

1

10

3

2

δ = 0.5

0.2

0.1

0.05

0.02

P

single pulse

t

p

-1
10

-5

10

-4

10

-3

10

-2

10

-1

1 10

03ai09

t

p

δ =

T

t

T

(s)

t

p

Mounted on metal clad substrate.

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

9397 750 09096

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Product data Rev. 01 — 11 February 2002 4 of 11

Philips Semiconductors

2N7002F

TrenchMOS™ Logic Level FET

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

g

fs

C

iss

C

oss

C

rss

t

on

t

off

Source-drain diode

V

SD

t

rr

Q

r

drain-source breakdown voltage ID=10µA; VGS=0V

=25°C 6075- V

T

j

= −55 °C 55--V

T

j

gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 9

=25°C 12- V

T

j

= 150 °C 0.6 - - V

T

j

= −55 °C - - 3.5 V

T

j

drain-source leakage current VDS=48V; VGS=0V

=25°C - 0.01 1.0 µA

T

j

= 150 °C --10µA

T

j

gate-source leakage current VGS= ±15 V; VDS= 0 V - 10 100 nA
drain-source on-state resistance VGS= 10 V; ID= 500 mA; Figure 7 and 8

=25°C - 1.7 2 Ω

T

j

= 150 °C - - 3.7 Ω

T

j

= 4.5 V; ID=75mA;Figure 7 and 8

V

GS

=25°C - 2.25 4 Ω

T

j

forward transconductance VDS=10V; ID= 200 mA 100 300 - mS
input capacitance VGS=0V; VDS= 10 V; f = 1 MHz; Figure 11 - 2540pF
output capacitance - 18 30 pF
reverse transfer capacitance - 7.5 10 pF
turn-on time VDD=50V; RD= 250 Ω; VGS=10V;

=50Ω; RGS=50Ω

R

turn-off time - 1215ns

G

- 3 10 ns

source-drain (diode forward) voltage IS= 300 mA; VGS=0V;Figure 12 - 0.85 1.5 V
reverse recovery time IS= 300 mA; dIS/dt = −100 A/µs; VGS=0V;

=25V

V

recovered charge - 30 - nC

DS

-30-ns

9397 750 09096

Product data Rev. 01 — 11 February 2002 5 of 11

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

2N7002F

TrenchMOS™ Logic Level FET

1

I

D

Tj = 25oC

(A)

0.8

0.6

0.4

0.2

0

0 0.8 1.6 2.4

10 V

VGS = 2.5 V

(V)

V

DS

03ai13

6 V7 V

5 V

4.5 V

4 V

3.5 V

3 V

0.8

I

VDS > ID X R

D

(A)

0.6

0.4

0.2

0

0246

DSon

Tj=25°C. Tj=25°C and 150 °C; VDS> ID× R

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

03ai15

Tj = 25oC

5 V

R

DSon

(Ω)

4

VGS = 3.5 V

3

4 V

4.5 V

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

2.4

a

1.8

Tj = 25oC

DSon

150oC

V

GS

03ai16

(V)

.

03aa28

6 V

I

D

7 V

10 V

(A)

2

1

0

0 0.2 0.4 0.6 0.8 1

Tj=25°C.

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

1.2

0.6

0

-60 0 60 120 180

R

DSon

=

a

---------------------------- -

R

DSon 25 C°()

(oC)

T

j

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 09096

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Product data Rev. 01 — 11 February 2002 6 of 11

Philips Semiconductors

2N7002F

TrenchMOS™ Logic Level FET

T

(oC)

j

03aa34

2.4

V

GS(th)

(V)

1.8

1.2

0.6

0

-60 0 60 120 180

typ

min

ID= 1 mA; VDS=VGS.T

Fig 9. Gate-source threshold voltage as a function of

Fig 10. Sub-threshold drain current as a function of

junction temperature.

10

C

(pF)

2

03ai18

C

iss

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

0 0.6 1.2 1.8 2.4

=25°C; VDS=5V.

j

gate-source voltage.

0.8
I

VGS = 0 V

S

(A)

0.6

03aa37

typmin

(V)

V

GS

03ai17

10

1

10

C

oss

C

rss

-1

1 10 10

V

DS

2

(V)

0.4

0.2

0

0 0.4 0.8 1.2

VGS= 0 V; f = 1 MHz. Tj=25°C and 150 °C; VGS=0V.

Fig 11. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values.

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical
values.

150 oC

Tj = 25 oC

(V)

V

SD

9397 750 09096

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Product data Rev. 01 — 11 February 2002 7 of 11

Philips Semiconductors

2N7002F

TrenchMOS™ Logic Level FET

9. Package outline

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

1

A

max.

0.1

cD

b

p

0.48

0.15

0.09

3.0

2.8

0.38

IEC JEDEC EIAJ

e

E

1.4

1.9

1.2

REFERENCES

e

0.95

H

L

Qwv

1

2.5

2.1

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

Fig 13. SOT23.

9397 750 09096

Product data Rev. 01 — 11 February 2002 8 of 11

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

1 20020211 - Product spec; initial version

2N7002F

TrenchMOS™ Logic Level FET

9397 750 09096

Product data Rev. 01 — 11 February 2002 9 of 11

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

Philips Semiconductors

11. Data sheet status

2N7002F

2N7002F

TrenchMOS™ Logic Level FET

TrenchMOS™ Logic Level FET

Data sheet status

Objective data Development This data sheet containsdata fromthe objective specification for product development.Philips Semiconductors

Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a

Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[1]

Product status

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitablefor
the specified use without further testing or modification.

[2]

Definition

reserves the right to change the specification in any manner without notice.

later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.

make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations orwarranties that theseproducts are
free from patent, copyright,or mask work right infringement, unless otherwise
specified.

Contact information

For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [e-mail]. Fax: [phone]

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

9397 750 09096

9397 750 09096

Product data Rev. 01 — 11 February 2002 10 of 11

Product data Rev. 01 — 11 February 2002 10 of 11

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Philips Semiconductors

Contents

1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance . . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

2N7002F

TrenchMOS™ Logic Level FET

© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 11 February 2002 Document order number: 9397 750 09096