Philips 2N7002E Technical data

2N7002E

N-channel TrenchMOS™ FET

Rev. 02 — 26 April 2005 Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS™ technology.

1.2 Features

■ Logic level threshold compatible ■ Very fast switching

■ Surface-mounted package ■ TrenchMOS™ technology

1.3 Applications

■ Logic level translator ■ High speed line driver

1.4 Quick reference data

■ VDS≤ 60 V ■ ID≤ 385 mA

■ R

≤ 3 Ω ■ P

DSon

= 0.83 W

tot

2. Pinning information

Table 1: Pinning

Pin Description Simplified outline Symbol

1 gate (G)
2 source (S)
3 drain (D)

12

SOT23

3

G

mbb076

D

S

Philips Semiconductors

2N7002E

N-channel TrenchMOS™ FET

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

2N7002E TO-236AB plastic surface mounted package; 3 leads SOT23

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

V

GSM

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 60 V
drain-gate voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ -60V
gate-source voltage (DC) - ±30 V
peak gate-source voltage tp≤ 50 µs; pulsed; duty cycle = 25 % - ±40 V
drain current (DC) Tsp=25°C; VGS=10V;Figure 2 and 3 - 385 mA

= 100 °C; VGS=10V;Figure 2 - 245 mA

T

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; Figure 3 - 1.5 A
total power dissipation Tsp=25°C; Figure 1 - 0.83 W
storage temperature −65 +150 °C
junction temperature −65 +150 °C

source (diode forward) current (DC) Tsp=25°C - 385 mA
peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs - 1.5 A

9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 02 — 26 April 2005 2 of 11

Philips Semiconductors

2N7002E

N-channel TrenchMOS™ FET

120

P

der

(%)

80

40

0

0 50 100 150 200

P

P

der

tot

------------------------

P

tot 25 C°()

100 %×= I

03aa17

T

(°C)

sp

Fig 1. Normalized total power dissipation as a

function of solder point temperature

10

120

I

der

(%)

80

40

0

0 50 100 150 200

I

D

der

-------------------- -

I

D25 C

()

100 %×=

°

03aa25

T

(°C)

sp

Fig 2. Normalized continuous drain current as a

function of solder point temperature

03ai10

I

D

(A)

Limit R

1

-1

10

-2

10

1 10 10

DSon

= V

/ I

DS

D

DC

VDS (V)

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

Tsp=25°C; IDM is single pulse

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

2

9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 02 — 26 April 2005 3 of 11

Philips Semiconductors

2N7002E

N-channel TrenchMOS™ FET

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

R

th(j-a)

thermal resistance from junction to solder point Figure 4 - - 150 K/W
thermal resistance from junction to ambient mounted on a printed-circuit

- - 350 K/W
board; minimum footprint;
vertical in still air

3

10

Z

th(j-sp)

K/W

2

10

δ = 0.5

0.2

0.1

10

0.05

1

10

0.02

single pul se

-1

-5

10

-4

10

-3

10

-2

10

-1

10

P

t

p

T

1 10

t

p

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

(s)

δ =

03ai09

t

p

T

t

9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 02 — 26 April 2005 4 of 11

Philips Semiconductors

2N7002E

N-channel TrenchMOS™ FET

6. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

g

fs

C

iss

C

oss

C

rss

t

on

t

off

Source-drain diode

V

SD

t

rr

Q

r

drain-source breakdown voltage ID=10µA; VGS=0V

=25°C60--V

T

j

= −55 °C55--V

T

j

gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 9 and 10

=25°C 123V

T

j

= 150 °C 0.6 - - V

T

j

= −55 °C - - 3.5 V

T

j

drain-source leakage current VDS=48V; VGS=0V

=25°C - 0.01 1 µA

T

j

= 150 °C --10µA

T

j

gate-source leakage current VGS= ±15 V; VDS= 0 V - 10 100 nA
drain-source on-state resistance VGS=10V; ID= 500 mA; Figure 6 and 8

=25°C - 2.3 3 Ω

T

j

= 150 °C - 4.2 5.55 Ω

T

j

= 4.5 V; ID= 75 mA; Figure 6 and 8 - 3.1 4 Ω

V

GS

forward transconductance VDS=10V; ID= 200 mA 100 300 - mS
input capacitance VGS=0V; VDS= 10 V; f = 1 MHz;
output capacitance - 18 30 pF

Figure 11

-2540pF

reverse transfer capacitance - 7.5 10 pF
turn-on delay time VDD=50V; RL= 250 Ω; VGS=10V;

R

=50Ω; RGS=50Ω

turn-off delay time - 12 15 ns

G

- 3 10 ns

source-drain (diode forward) voltage IS= 300 mA; VGS=0V;Figure 12 - 0.85 1.5 V
reverse recovery time IS= 300 mA; dIS/dt = −100 A/µs;

V

=0V

recovered charge - 30 - nC

GS

-30-ns

9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 02 — 26 April 2005 5 of 11

Philips Semiconductors

2N7002E

N-channel TrenchMOS™ FET

1

Tj = 25 °C VGS (V) =

I

D

(A)

0.8

0.6

0.4

0.2

0

0 0.8 1.6 2.4 3.2

10

V

03ai12

(V)

DS

67

5

4.5

4

3.5

3

2.5

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

03ai16

(A)

0.8

I

D

0.6

6

VGS (V) =

R

DSon

(Ω)

4

2

0

0 0.2 0.4 0.6 0.8 1

=25°C

j

3.5

4

4.5

03ai14

Tj = 25 °C

5

6

10

I

(A)

D

7

Fig 6. Drain-source on-state resistance as a function

of drain current; typical values

2.4

a

1.8

03aa28

Tj = 25 °C

0.4

0.2

0

0246

Tj=25°C and 150 °C; VDS>ID× R

150 °C

V

DSon

(V)

GS

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

1.2

0.6

0

-60 0 60 120 180

R

DSon

=

a

------------------------------

R

DSon 25 C

°

()

T

(°C)

j

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature

9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 02 — 26 April 2005 6 of 11

Philips Semiconductors

2N7002E

N-channel TrenchMOS™ FET

03aa34

V

2.4

GS(th)

(V)

typ

1.8

1.2
min

0.6

0

-60 0 60 120 180

ID= 1 mA; VDS=V

GS

T

(°C)

j

Fig 9. Gate-source threshold voltage as a function of

junction temperature

10

C

(pF)

2

03ai18

C

iss

-1

10

I

D

03aa37

(A)

-2

10

-3

10

typmin

-4

10

-5

10

-6

10

0 0.6 1.2 1.8 2.4

V

(V)

GS

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

03ai17

(A)

0.8

I

S

0.6

C

VDS (V)

oss

C

rss

2

10

1

-1

10

1 10 10

VGS= 0 V; f = 1 MHz Tj=25°C and 150 °C; VGS=0V

Fig 11. Input,output and reverse transfer capacitances

as a function of drain-source voltage; typical
values

0.4

0.2
150 °C

0

0 0.4 0.8 1.2

Tj = 25 °C

V

SD

(V)

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical
values

9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 02 — 26 April 2005 7 of 11

Philips Semiconductors

2N7002E

N-channel TrenchMOS™ FET

7. Package outline

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

1.1

mm

0.9

OUTLINE

VERSION

SOT23 TO-236AB

1

A

max.

0.1

cD

b

p

0.48

0.15

0.38

0.09

IEC JEDEC JEITA

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e

e

0.95

H

L

Qwv

1

2.5

2.1

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

99-09-13
04-11-04

Fig 13. Package outline SOT23

9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 02 — 26 April 2005 8 of 11

Philips Semiconductors

N-channel TrenchMOS™ FET

2N7002E

8. Revision history

Table 6: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

2N7002E_2 20050426 Product data sheet - 9397 750 14944 2N7002E-01
Modifications:

2N7002E-01 20020211 Product data - 9397 750 09095 -

• The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

• Table 5 “Characteristics” Addition of upper limit for V

GS(th)

.

9397 750 14944 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 02 — 26 April 2005 9 of 11

Philips Semiconductors

9. Data sheet status

2N7002E

N-channel TrenchMOS™ FET

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification This datasheet contains data fromthe preliminary specification. Supplementary data willbe published

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

10. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applicationswillbesuitable for
the specified use without further testing or modification.

[2] [3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a later date.Philips Semiconductors reserves the right to changethespecification without notice, in
order to improve the design and supply the best possible product.

right to make changes atany time in order to improve the design,manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, andmakes norepresentationsor warrantiesthat these productsare
free frompatent, copyright, or maskwork right infringement, unless otherwise
specified.

12. Trademarks

11. Disclaimers

TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [e-mail]

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Product data sheet Rev. 02 — 26 April 2005 10 of 11

Philips Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 10

10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Contact information . . . . . . . . . . . . . . . . . . . . 10

2N7002E

N-channel TrenchMOS™ FET

© Koninklijke Philips Electronics N.V. 2005

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 26 April 2005

Document number: 9397 750 14944