Philips 2N7000 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
2N7000
N-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors Product specification
N-channel enhancement mode vertical
D-MOS transistor
FEATURES
• Low R
DS(on)
• Direct interface to C-MOS, TTL,
etc.
• High-speed switching
• No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a TO-92
variant envelope, intended for use in
relay, high-speed and line
transformer drivers.
PINNING - TO-92 VARIANT
PIN DESCRIPTION
1 drain
2 gate
3 source
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
DS
I
D
R
DS(on)
V
GS(th)
drain-source voltage 60 V
drain current DC value 280 mA
drain-source on-resistance ID = 500 mA
gate-source threshold voltage ID = 1 mA
PIN CONFIGURATION
handbook, halfpage
2N7000
5 Ω
VGS = 10 V
3V
VGS = V
1
2
3
MAM146
DS
d
g
s
Fig.1 Simplified outline and symbol.
April 1995 2
Philips Semiconductors Product specification
N-channel enhancement mode vertical
2N7000
D-MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
DG
±V
GSO
I
D
I
DM
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER VALUE UNIT
R
th j-a
drain-source voltage − 60 V
drain-gate voltage − 60 V
gate-source voltage open drain − 40 V
drain current DC value − 280 mA
drain current peak value − 1.3 A
total power dissipation T
= 25 °C − 830 mW
amb
storage temperature range −55 150 °C
junction temperature − 150 °C
from junction to ambient 150 K/W
April 1995 3
Philips Semiconductors Product specification
N-channel enhancement mode vertical
2N7000
D-MOS transistor
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage ID = 10 µA
VGS = 0
I
DSS
drain-source leakage current VDS = 48 V
VGS = 0
±I
GSS
gate-source leakage current ±VGS = 15 V
VDS = 0
V
GS(th)
gate-source threshold voltage ID = 1 mA
VGS = V
R
DS(on)
drain-source on-resistance ID = 500 mA
VGS = 10 V
I
D
VGS = 4.5 V
Y
transfer admittance ID = 200 mA
fs
VDS = 10 V
C
iss
input capacitance VDS = 10 V
VGS = 0
f = 1 MHz
C
oss
output capacitance VDS = 10 V
VGS = 0
f = 1 MHz
C
rss
feedback capacitance VDS = 10 V
VGS = 0
f = 1 MHz
DS
= 75 mA
60 90 − V
−−1 µA
−−10 nA
0.8 − 3V
− 3.5 5 Ω
−−5.3 Ω
100 200 − mS
− 25 40 pF
− 22 30 pF
− 610pF
Switching times (see Figs 2 and 3)
t
on
t
off
turn-on time ID = 200 mA
turn-off time ID = 200 mA
April 1995 4
− 410ns
VDD = 50 V
VGS = 0 to 10 V
− 410ns
VDD = 50 V
VGS = 0 to 10 V
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