Philips 2N6427 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D186

2N6427

NPN Darlington transistor

Product specification
File under Discrete Semiconductors, SC04

1997 Jul 04

Philips Semiconductors Product specification

NPN Darlington transistor 2N6427

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 30 V)

• High DC current gain (min. 10000).

PINNING

PIN DESCRIPTION

1 collector
2 base
3 emitter

APPLICATIONS

• General purpose

• High gain amplification.

DESCRIPTION

NPN Darlington transistor in a TO-92; SOT54 plastic
package.

handbook, halfpage

1

2

3

2

MAM252

1

TR1

TR2

3

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I
P
h
f

CBO
CES

C

tot

FE

T

collector-base voltage open emitter − 40 V
collector-emitter voltage VBE=0 − 30 V
collector current − 500 mA
total power dissipation T

≤ 25 °C − 625 mW

amb

DC current gain IC= 10 mA; VCE= 5 V 10000 100000
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 125 − MHz

1997 Jul 04 2

Philips Semiconductors Product specification

NPN Darlington transistor 2N6427

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

C

I

CM

I

B

P

tot

T

stg

T

j

T

amb

Note

1. Transistor mounted on an FR4 printed-circuit board.

collector-base voltage open emitter − 40 V
collector-emitter voltage VBE=0 − 30 V
emitter-base voltage open collector − 10 V
collector current (DC) − 500 mA
peak collector current − 800 mA
base current (DC) − 200 mA
total power dissipation T

≤ 25 °C; note 1 − 625 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 200 K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

=25°C unless otherwise specified.

T

amb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

CES

I

EBO

h

FE

V

CEsat

V

BEsat

V

BEon

f

T

collector cut-off current IE= 0; VCB=30V − 100 nA

= 0; VCB=30V; Tj= 150 °C − 10 µA

I

E

collector cut-off current VBE= 0; IB= 0; VCE=30V − 100 nA
emitter cut-off current IC= 0; VEB=10V − 100 nA
DC current gain VCE= 5 V; note 1

= 10 mA 10000 100000

I

C

I

= 100 mA 20000 200000

C

I

= 500 mA 14000 140000

C

collector-emitter saturation voltage IC= 50 mA; IB= 0.5 mA; note 1 − 1.2 V

= 500 mA; IB= 0.5 mA; note 1 − 1.5 V

I

C

base-emitter saturation voltage IC= 500 mA; IB= 0.5 mA; note 1 − 2V
base-emitter on-state voltage IC= 50 mA; VCE=5V − 1.75 V
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 125 − MHz

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

1997 Jul 04 3