Philips 2N5550 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
2N5550; 2N5551
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Apr 09
1999 Apr 23
Philips Semiconductors Product specification
NPN high-voltage transistors 2N5550; 2N5551
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 160 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• Switching and amplification in high voltage applications
such as telephony.
handbook, halfpage
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complements: 2N5400 and 2N5401.
1
2
3
2
MAM279
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
2N5550 − 160 V
2N5551 − 180 V
V
CEO
collector-emitter voltage open base
2N5550 − 140 V
2N5551 − 160 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 6V
collector current (DC) − 300 mA
peak collector current − 600 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 630 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1
3
1999 Apr 23 2
Philips Semiconductors Product specification
NPN high-voltage transistors 2N5550; 2N5551
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient 200 K/W
collector cut-off current
2N5550 I
= 0; VCB= 100 V − 100 nA
E
I
= 0; VCB= 100 V; T
E
= 100 °C − 100 µA
amb
collector cut-off current
2N5551 IE= 0; VCB= 120 V − 50 nA
I
= 0; VCB= 120 V; T
E
= 100 °C − 50 µA
amb
emitter cut-off current IC= 0; VEB=4V − 50 nA
DC current gain IC= 1 mA; VCE= 5 V; see Fig.2
2N5550 60 −
2N5551 80 −
DC current gain I
= 10 mA; VCE= 5 V; see Fig.2
C
2N5550 60 250
2N5551 80 250
DC current gain I
= 50 mA; VCE= 5 V; see Fig.2
C
2N5550 20 −
2N5551 30 −
collector-emitter saturation voltage IC= 10 mA; IB=1mA − 150 mV
collector-emitter saturation voltage I
= 50 mA; IB=5mA
C
2N5550 − 250 mV
2N5551 − 200 mV
base-emitter saturation voltage IC= 10 mA; IB=1mA − 1V
I
= 50 mA; IB=5mA − 1V
C
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 6pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 30 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 100 300 MHz
= 200 µA; VCE=5V; RS=2kΩ;
C
2N5550 − 10 dB
f = 10 Hz to 15.7 kHz
2N5551 − 8dB
1999 Apr 23 3
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