Philips 2n5415 DATASHEETS
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16
TO-39
Metal Can Package
High Speed Switching and Linear amplifier Appliances in Military,
Industrial and Commercial Equipment.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL 2N5415 2N5416 UNITS
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current Continuous
Power Dissipation @ Ta=50ºC
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
Derate Above 25ºC mW/ºC
Power Dissipation@ Tc=25ºC
P
D
Derate Above 25ºC
Junction Temperature Tj (--------------------200----------------
Operating And Storage Junction
T
stg
Temperature Range
200 300 V
200 350 V
46V
(--------------------1------------------
(-----------------0.5------------------
(--------------------1------------------
A
A
W
(------------------10------------------- W
mW/ºC
-65 to +200 ºC
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
R
R
th(j-a)
th(j-c)
150 ºC/W
17.5 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION 2N5415 2N5416 UNITS
Collector Emitter Breakdown Voltage
Collector Cut off Current
Collector Cutoff Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
BV
V
V
*I
CEO(sus)
I
CBO
I
CEO
I
EBO
CE(Sat)
BE(Sat)
h
*I
FE
=50mA,IB=0
C
VCB=175V, IE=0
V
=280V, IE=0
CB
VCE=150V, IB=0
V
=250V, IB=0
CE
VEB=4V, IC=0
V
=6V, IC=0
EB
IC=50mA,IB=5mA
IC=50mA,IB=5mA
=50mA,VCE=10V
C
>200 >300 V
<50
<50
<50
<50
<20
<20
<2.5 <2 V
<1.5 <1.5 V
30-150 30-120
µA
µA
µA
µA
µA
µA
Continental Device India Limited
Data Sheet Page 1 of 4
PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION UNITS
DYNAMIC CHARACTERISTICS
2N5415/16
|I
Small Signal Current Gain
Transition Frequency
Output Capacitance
Input Capacitance
| h
fe
f
T
C
ob
C
ib
*Pulse Test: Pulse Width <300µs, Duty Cycle <2%
=5mA, VCE=10V,
C
f=1kHz
IC=10mA, VCE=10V
f=5MHz
VCB=10V, IE=0, f=1MHz
VEB=V
max, IC=0,
EBO
f=1MHz
>25
>15
<15
<75
MHz
pF
pF
Continental Device India Limited
Data Sheet Page 2 of 4
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