Philips 2N5401 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
2N5401
PNP high-voltage transistor
Product specification
Supersedes data of 1997 May 22
1999 Apr 08
Philips Semiconductors Product specification
PNP high-voltage transistor 2N5401
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 150 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• General purpose switching and amplification
• Telephony applications.
handbook, halfpage
DESCRIPTION
1
2
3
1
2
PNP high-voltage transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N5551.
MAM280
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−160 V
collector-emitter voltage open base −−150 V
emitter-base voltage open collector −−5V
collector current (DC) −−300 mA
peak collector current −−600 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C − 630 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 08 2
Philips Semiconductors Product specification
PNP high-voltage transistor 2N5401
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
F noise figure I
thermal resistance from junction to ambient note 1 200 K/W
collector cut-off current IE= 0; VCB= −120 V −−50 nA
I
= 0; VCB= −120 V; T
E
= 100 °C −−50 µA
amb
emitter cut-off current IC= 0; VEB= −4V −−50 nA
DC current gain IC= −1 mA; VCE= −5 V; see Fig.2 50 −
I
= −10 mA; VCE= −5 V; see Fig.2 60 240
C
= −50 mA; VCE= −5 V; see Fig.2 50 −
I
C
collector-emitter saturation voltage IC= −10 mA; IB= −1mA −−200 mV
I
= −50 mA; IB= −5mA −−500 mV
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 6pF
transition frequency IC= −10 mA; VCE= −10 V; f = 100 MHz 100 300 MHz
= −200 µA; VCE= −5 V; RS=2kΩ;
C
− 8pF
f = 10 Hz to 15.7 kHz
1999 Apr 08 3
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