Philips 2N5088 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
2N5088
NPN general purpose transistor
Product specification
Supersedes data of 1997 Jul 03
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors Product specification
NPN general purpose transistor 2N5088
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 30 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• Low noise stages in audio equipment.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
handbook, halfpage
1
2
3
1
2
PNP complement: 2N5087.
MAM279
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
F noise figure I
collector-base voltage open emitter − 35 V
collector-emitter voltage open base − 30 V
peak collector current − 200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
DC current gain IC= 1 mA; VCE= 5 V 350 −
transition frequency IC= 500 µA; VCE= 5 V; f = 100 MHz 50 − MHz
= 200 µA; VCE=5V; RS=2kΩ;
C
− 3dB
f = 10 Hz to 15.7 kHz
1997 Sep 03 2
Philips Semiconductors Product specification
NPN general purpose transistor 2N5088
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter − 35 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 4.5 V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
F noise figure I
collector cut-off current IE= 0; VCB=20V − 50 nA
emitter cut-off current IC= 0; VEB= 4.5 V − 50 nA
DC current gain IC= 100 µA; VCE= 5 V 300 900
I
= 1 mA; VCE= 5 V 350 −
C
I
= 10 mA; VCE= 5 V 300 −
C
collector-emitter saturation voltage IC= 10 mA; IB=1mA − 500 mV
base-emitter voltage IC= 10 mA; VCE=5V − 800 mV
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 4pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 12 pF
transition frequency IC= 500 µA; VCE= 5 V; f = 100 MHz 50 − MHz
= 200 µA; VCE=5V; RS=2kΩ;
C
− 3dB
f = 10 Hz to 15.7 kHz
1997 Sep 03 3
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