Philips 2N5064 Datasheet
Philips Semiconductors Product specification
Thyristor 2N5064
sensitive gate
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated sensitive gate SYMBOL PARAMETER MAX. UNIT
thyristor in a plastic envelope,
intended for use in general purpose V
switching and phase control V
applications. This device is intended I
to be interfaced directly to I
microcontrollers, logic integreated I
circuits and other low power gate
trigger circuits.
PINNING - TO92 variant PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
, Repetitive peak off-state voltages 200 V
DRM
RRM
T(AV)
T(RMS)
TSM
Average on-state current 0.5 A
RMS on-state current 0.8 A
Non-repetitive peak on-state current 10 A
1 anode
ak
2 gate
3 cathode
321
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
, V
DRM
I
T(AV)
I
T(RMS)
I
TRM
I
TSM
I2tI
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
Repetitive peak off-state - 200 V
RRM
voltages
Average on-state current half sine wave
Tc ≤ 67 ˚C - 0.51 A
Tc ≤ 102 ˚C - 0.255 A
RMS on-state current all conduction angles - 0.8 A
Repetitive peak on-state - 8 A
current
Non-repetitive peak half sine wave; Ta = 25 ˚C prior to surge; - 10 A
on-state current t = 8.3 ms
2
t for fusing t = 8.3 ms - 0.4 A2s
Peak gate current Ta = 25˚C, tp = 300µs; f = 120 Hz - 1 A
Peak gate voltage - 5 V
Peak reverse gate voltage - 5 V
Peak gate power Ta = 25˚C - 0.1 W
Average gate power Ta = 25˚C, over any 16 ms period - 0.01 W
Storage temperature -65 150 ˚C
Operating junction -65 125 ˚C
temperature
October 1997 1 Rev 1.200
Philips Semiconductors Product specification
Thyristor 2N5064
sensitive gate
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-c
R
th j-a
Thermal resistance see note:
junction to case
Thermal resistance - 200 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tc = 25 ˚C, RGK = 1 kΩ unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
ID, I
R
Gate trigger current Tc = 25 ˚C - - 200 µA
Tc = -65 ˚C - - 350 µA
VD = V
circuit
Latching current VD = 12 V; RGK = 1 kΩ --6mA
Holding current VD = 12 V; RGK = 1 kΩ --5mA
On-state voltage IT = 1.2 A peak; tp = 300 µs; δ ≤ 0.01 - - 1.7 V
Gate trigger voltage Tj = 25 ˚C - - 0.8 V
Tj = -65 ˚C - - 1.2 V
Tj = 125 ˚C 0.1 - - V
VD = V
circuit
Off-state leakage current VD = V
Tj = 25 ˚C - - 10 µA
Tj = 125 ˚C - - 50 µA
1
; RL = 100 Ω; gate open
DRM(max)
; RL = 100 Ω; gate open
DRM(max)
; VR = V
DRM(max)
RRM(max)
- - 75 K/W
DYNAMIC CHARACTERISTICS
Tc = 25 ˚C, RGK = 1 kΩ unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; RGK = 1 kΩ
t
gt
t
q
Gate controlled turn-on ITM = 2 A; VD = V
time dIG/dt = 0.1 A/µs
Circuit commutated VDM = 67% V
turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
; Tj = 125 ˚C; - 25 - V/µs
DRM(max)
; IG = 10 mA; - 2 - µs
DRM(max)
; Tj = 125 ˚C; - 100 - µs
DRM(max)
1 This measurement is made with the case mounted "flat side down" on a heatsink and held in position by means of
a metal clamp over the curved surface.
October 1997 2 Rev 1.200
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