Philips 2N4403 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
2N4403
PNP switching transistor
Product specification
Supersedes data of 1997 May 05
1999 Apr 23
Philips Semiconductors Product specification
PNP switching transistor 2N4403
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• Industrial and consumer switching applications.
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N4401.
handbook, halfpage
1
2
3
2
MAM280
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 630 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1
3
1999 Apr 23 2
Philips Semiconductors Product specification
PNP switching transistor 2N4403
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels); see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 200 K/W
collector cut-off current IE= 0 mA; VCB= −40 V −−50 nA
emitter cut-off current IC= 0 mA; VEB= −5V −−50 nA
DC current gain VCE= −1 V; see Fig.2
= −0.1 mA 30 −
I
C
I
= −1mA 60 −
C
=−10 mA 100 −
I
C
V
= −2V
CE
I
=−150 mA 100 300
C
I
= −500 mA 20 −
C
collector-emitter saturation
voltage
IC= −150 mA; IB= −15 mA −−400 mV
I
= −500 mA; IB= −50 mA −−750 mV
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA −−950 mV
I
= −500 mA; IB= −50 mA −−1.3 V
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8.5 pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 30 pF
transition frequency IC= −20 mA; VCE= −10 V; f = 100 MHz 200 − MHz
turn-on time I
delay time − 15 ns
= −150 mA; I
Con
I
=15mA
Boff
= −15 mA;
Bon
− 40 ns
rise time − 30 ns
turn-off time − 350 ns
storage time − 300 ns
fall time − 50 ns
1999 Apr 23 3
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