Philips 2N4126 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
2N4126
PNP general purpose transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Mar 25
Philips Semiconductors Product specification
PNP general purpose transistor 2N4126
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 25 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• General purpose switching and amplification,
e.g. small-signal audio-frequency applications.
DESCRIPTION
handbook, halfpage
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: 2N4124.
1
2
3
MAM280
1
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
CBO
CEO
CM
tot
FE
T
collector-base voltage open emitter −−25 V
collector-emitter voltage open base −−25 V
peak collector current −−300 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
DC current gain IC= −2 mA; VCE= −1 V 120 360
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 250 − MHz
1997 Mar 25 2
Philips Semiconductors Product specification
PNP general purpose transistor 2N4126
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter −−25 V
collector-emitter voltage open base −−25 V
emitter-base voltage open collector −−4V
collector current (DC) −−200 mA
peak collector current −−300 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
collector cut-off current IE= 0; VCB= −20 V −−50 nA
emitter cut-off current IC= 0; VEB= −3V −−50 nA
DC current gain IC= −2 mA; VCE= −1 V; note 1 120 360
I
= −50 mA; VCE= −1 V; note 1 60 −
C
collector-emitter saturation voltage IC= −50 mA; IB= −5 mA; note 1 −−400 mV
base-emitter saturation voltage IC= −50 mA; IB= −5 mA; note 1 −−950 mV
collector capacitance IE=ie= 0; VCB= −5V;f=1MHz − 4.5 pF
emitter capacitance IC=ic= 0; VEB= −0.5 V; f = 1 MHz − 10 pF
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 250 − MHz
= −100 µA; VCE= −5V;RS=1kΩ;
C
− 4dB
f = 10 Hz to 15.7 kHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1997 Mar 25 3
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