Philips 2N4036 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D111
2N4036
PNP switching transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 19
Philips Semiconductors Product specification
PNP switching transistor 2N4036
FEATURES
• High current (max. 1 A)
• Low voltage (max. 65 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• Amplifier and switching applications.
DESCRIPTION
PNP switching transistor in a TO-39 metal package.
handbook, halfpage
1
2
2
3
MAM318
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
t
off
collector-base voltage open emitter −−90 V
collector-emitter voltage open base −−65 V
collector current (DC) −−1A
total power dissipation Tmb≤ 25 °C − 7W
DC current gain IC= −150 mA; VCE= −2 V 20 200
transition frequency IC= −50 mA; VCE= −10 V; f = 100 MHz 60 − MHz
turn-off time I
= −150 mA; I
Con
= −15 mA; I
Bon
=15mA − 700 ns
Boff
3
1
1997 Jun 19 2
Philips Semiconductors Product specification
PNP switching transistor 2N4036
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−90 V
collector-emitter voltage open base −−65 V
emitter-base voltage open collector −−7V
collector current (DC) −−1A
peak collector current −−1A
peak base current −−500 mA
total power dissipation Tmb≤ 25 °C − 7W
storage temperature −55 +200 °C
junction temperature − 200 °C
operating ambient temperature −55 +200 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-c
thermal resistance from junction to case in free air 25 K/W
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
C
c
f
T
collector cut-off current IE= 0; VCB= −60 V −−50 nA
I
= 0; VCB= −60 V; T
E
= 150 °C −−5µA
amb
emitter cut-off current IC= 0; VEB= −4V −−50 nA
DC current gain IC= −0.1 mA; VCE= −10 V 20 −
I
= −150 mA; VCE= −2 V 20 200
C
I
= −150 mA; VCE= −10 V 40 140
C
I
= −150 mA; VCE= −10 V;
C
T
=55°C
amb
20 −
collector-emitter saturation voltage IC= −150 mA; IB= −15 mA −−650 mV
base-emitter saturation voltage IC= −150 mA; IB= −15 mA −−1.4 V
base-emitter on-stage voltage IC= −150 mA; VCE= −10 V −−1.5 V
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 30 pF
transition frequency IC= −50 mA; VCE= −10 V; f = 100 MHz 60 − MHz
Switching times (between 10% and 90% levels)
t
on
t
r
t
off
t
s
t
f
turn-on time I
rise time − 70 ns
= −150 mA; I
Con
I
=15mA
Boff
= −15 mA;
Bon
− 110 ns
turn-off time − 700 ns
storage time − 600 ns
fall time − 100 ns
1997 Jun 19 3
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