Philips 2N5416, 2N5415, 2N4033, 2N4031 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D111
2N5415; 2N5416
PNP high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 21
Philips Semiconductors Product specification
PNP high-voltage transistors 2N5415; 2N5416
FEATURES
• Low current (max. 200 mA)
• High voltage (max. 300 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• Switching and linear amplification in military, industrial
and consumer equipment.
handbook, halfpage
DESCRIPTION
PNP high-voltage transistor in a TO-39 metal package.
1
2
2
3
MAM334
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
2N5415 −−200 V
2N5416 −−350 V
V
CEO
collector-emitter voltage open base
2N5415 −−200 V
2N5416 −−300 V
I
CM
P
tot
h
FE
peak collector current − 400 mA
total power dissipation T
≤ 50 °C − 1W
amb
DC current gain IC= −50 mA; VCE= −10 V
2N5415 30 150
2N5416 30 120
f
T
transition frequency IC= −10 mA; VCE= −10 V; f = 5 MHz 15 − MHz
3
1
1997 May 21 2
Philips Semiconductors Product specification
PNP high-voltage transistors 2N5415; 2N5416
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
2N5415 −−200 V
2N5416 −−350 V
collector-emitter voltage open base
2N5415 −−200 V
2N5416 −−300 V
emitter-base voltage open collector
2N5415 −−4V
2N5416 −−6V
collector current (DC) −−200 mA
peak collector current −−400 mA
peak base current −−200 mA
total power dissipation T
≤ 50 °C − 1W
amb
T
≤ 25 °C − 10 W
case
storage temperature −65 +200 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 150 K/W
thermal resistance from junction to case 17.5 K/W
1997 May 21 3
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