Philips 2N3553 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
2N3553
Silicon planar epitaxial
overlay transistor
Product specification
Supersedes data of October 1981
File under Discrete Semiconductors, SC08a
1995 Oct 27
Philips Semiconductors Product specification
Silicon planar epitaxial
overlay transistor
APPLICATIONS
• The 2N3553 is intended for use in VHF and UHF
transmitting applications.
PINNING - TO-39/3
PIN DESCRIPTION
1 emitter
2 base
3 collector
2N3553
DESCRIPTION
The device is a silicon NPN overlay transistor in a TO-39
metal package with the collector connected to the case.
handbook, halfpage
1
2
3
Fig.1 Simplified outline.
MBB199
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
V
I
P
T
f
CEX
CEO
CM
tot
j
T
collector-emitter voltage IC≤ 200 mA; VBE= −1.5 V 65 V
collector-emitter voltage open base; IC≤ 200 mA 40 V
peak collector current 1.0 A
total power dissipation up to Tmb=25°C 7.0 W
junction temperature 200 °C
transition frequency IC= 125 mA; VCE= 28 V 500 −
RF performance
f
(MHz)
V
(V)
CE
P
(W)
o
G
p
(dB)
η
(%)
175 28 2.5 >10 >50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1995 Oct 27 2
Philips Semiconductors Product specification
Silicon planar epitaxial
2N3553
overlay transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-mb
collector-base voltage open emitter − 65 V
collector-emitter voltage IC≤ 200 mA; VBE= −1.5 V − 65 V
collector-emitter voltage open base; IC≤ 200 mA − 40 V
emitter-base voltage open collector − 4V
collector current (DC) − 0.35 A
peak collector current − 1A
total power dissipation up to Tmb=25°C − 7W
storage temperature −65 +200 °C
junction temperature − 200 °C
thermal resistance from junction to mounting base 25 K/W
10
handbook, halfpage
I
C
(A)
1
-1
10
-2
10
1
(1) All frequencies, including DC.
(2) f ≥ 1 MHz.
(3) Allowed during switching off, provided the transistor is cut-off
≤−1.5 V; RBE≥ 33 Ω; IC≤ 200 mA and the transient
with V
BB
energy ≤ 0.5 mW.
(1)
10
VCE (V)
MGC928
(2)
(3)
Fig.2 DC SOAR.
10
handbook, halfpage
P
tot
(W)
5
2
10
0
0
100 200
Tmb (
MGC927
o
C)
Fig.3 Power derating curve.
1995 Oct 27 3
Loading...