Philips 2n3440 DATASHEETS
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
IS/ISO 9 0 02
Lic# QSC/L- 000019.2
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439
2N3440
TO-39
High Voltage Silicon Planar Transistors used in High Voltage &
High Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified)
DESCRIPTION SYMBOL 2N3439 2N3440 UNITS
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Base Current
Power Dissipation@ Ta=25 degC
Derate Above 25 deg C
Power Dissipation@ Tc=25 degC
Derate Above 25 deg C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION 2N3439 2N3440 UNITS
Collector -Emitter Voltage
Collector-Cut off Current
Emitter-Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
VCEO 350 250 V
VCBO 450 300 V
VEBO 7.0 V
IC 1.0 A
IB 0.5 A
PD 1.0 W
5.7 mW/deg C
PD 5.0 W
28.6 mW/deg C
Tj, Tstg -65 to +200 deg C
Rth(j-a) 175 deg C/W
Rth(j-c) 35 deg C/W
VCEO(sus)* IC=50mA,IB=0 >350 >250 V
ICBO VCB=360V, IE=0 <20 - uA
VCB=250V, IE=0 - <20 uA
ICEO VCE=300V, IB=0 <20 - uA
VCE=200V, IB=0 - <50 uA
ICEX VCE=450V,VBE=1.5V <500 - uA
VCE=300V,VBE=1.5V - <500 uA
IEBO VEB=6V, IC=0 <20 <20 uA
hFE* IC=2mA,VCE=10V >30 -
IC=20mA,VCE=10V 40-160 40-160
VCE(Sat)* IC=50mA,IB=4mA <0.5 <0.5 V
VBE(Sat) * IC=50mA,IB=4mA <1.3 <1.3 V
Continental Device India Limited
Data Sheet
Page 1 of 3
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N3439/3440
DESCRIPTION SYMBOL TEST CONDITION 2N3439 2N3440 UNITS
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain.
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Real Part of Input Impedence
*Pulse Test:- Pulse Width =300us, Duty Cycle=2%
hfe IC=5mA, VCE=10V, >25 >25
f=1kHz
Cob VCB=10V, IE=0, f=1MHz <10 <10 pF
Cib VEB=5V, IC=0, f=1MHz <75 <75 pF
ft IC=10mA, VCE=10V >15 >15 MHz
f=5MHz
Re(hie) VCE-10V, IC=5mA <300 <300 ohms
f=1MHz
TO-39 Metal Can Package
A
B
DIM MIN MAX
A 8.5 0 9.39
B 7.7 4 8.50
C 6.0 9 6.60
C
E
D 0.40 0.53
E—0.88
F 2.41 2.66
G 4.82 5.3 3
K
H 0.71 0.8 6
J 0.7 3 1.02
K12.70 —
L 42 DEG 48 DEG
All dime nsio ns are in m m
D
G
2
1
3
L
H
J
F
2
3
PIN CONFIGURATION
1. EM ITTER
2. BASE
3. COLLECTOR
1
Packing Detail
PACKAGE
Details
TO-39 500 pcs/polybag 540 gm/500 pcs 3" x 7.5" x 7.5" 20.0K 17" x 15" x 13.5" 32.0K 40 kgs
Continental Device India Limited
STANDARD PACK INNER CARTON BOX
Net Weight/Qty
Data Sheet
Qty
OUTER CARTON BOX
Qty Gr WtSize Size
Page 2 of 3
Loading...