Philips 2n3019 DATASHEETS
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3019
2N3020
TO-39
Metal Can Package
Designed for use in General Purpose Amplifier and High Speed Switching Applications
These Transistors are also Suitable for High Current Amplifier Applications
CEO
CBO
EBO
CM
D
j
stg
th(j-a)
th(j-c)
CEO
CBO
EBO
CBOVCB
EBOVEB
CE(sat)
BE(sat)
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNITS
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25º C
Power Dissipation@ Tc=25ºC
Junction Temperature
Storage Temperature
V
V
V
I
P
T
T
80 V
140 V
7 V
1 A
800 mW
5 W
+200 ºC
-65 to +200 ºC
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
R
R
218.7 ºC/W
35 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS
BV
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Leakage Current
Emitter Leakage Current
* IC=30mA,IB=0
BV
BV
IC=100µA, IE=0 140 V
IE=100µA, IC =O 7 V
I
VCB=90V, IE=0, Ta=150ºC
I
=90V, IE=0
=5V, IC=0
80 V
10
10
10
nΑ
µA
nΑ
V
Collector Emitter Saturation Voltage
* IC =150mA, IB =15mA
IC =500mA, IB =50mA
V
Base Emitter Saturation Voltage
Continental Device India Limited Data Sheet Page 1 of 4
* IC=150mA, IB =15mA
0.2 V
0.5 V
1.1 V
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3019
2N3020
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
TIC
obVCB
ibVEB
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3019
2N3020
hFE* IC=0.1mA,VCE=10V
50
30 100
hFE* IC=10mA,VCE=10V
90
40 120
hFE* IC=150mA,VCE=10V
100 300
40 120
hFE* IC=500mA,VCE=10V
50
30 100
hFE* IC=1A,VCE=10V
15
15
hFE* IC=150mA,VCE=10V
Tc= -55ºC 40
| hfe | IC=1mA, VCE=5V, f=1KHz
80 400
30 200
Transition Frequency
2N3019
2N3020
Output Capacitance
Input Capacitance
Noise Figure
2N3019
Collector Base Time Constant
rbb'cb'c
*Pulse Test: Pulse Width <300µµs, Duty Cycle <1.0%
f
=50mA, VCE=10V
f=20MHz 100 MHz
C
C
=10V, IE=0, f=1MHz
=0.5V, IC=0, f=1MHz
NF IC=100µA, VCE=10V
Rs=1KΩ,f=1KHz 4 dB
IC=10mA,VCB=10V, f=4MHz
f=1MHz
80 MHz
12 pF
60 pF
400 ps
Continental Device India Limited Data Sheet Page 2 of 4
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